• DocumentCode
    999709
  • Title

    Monolithically integrated DBR lasers with simple tapered waveguide for low-loss fibre coupling

  • Author

    Kasaya, K. ; Kondo, Yuta ; Okamoto, Mitsuo ; Mitomi, O. ; Naganuma, M.

  • Author_Institution
    NTT Opto-Electron. Labs., Atsugi, Japan
  • Volume
    29
  • Issue
    23
  • fYear
    1993
  • Firstpage
    2067
  • Lastpage
    2068
  • Abstract
    Describes InGaAsP/InP 1.55 mu m distributed Bragg reflector lasers monolithically integrated with a laterally tapered waveguide on the output facet. The tapered waveguide region of the devices has a thick partially clad p-InP layer grown by selective growth. The growth and fabrication processing steps were the same as those used to make conventional DBR laser diodes. The lasers demonstrate good lasing characteristics, low-loss coupling of less than 2.8dB and +/-2 mu m misalignment tolerance with a flat-end singlemode fibre in both the lateral and vertical directions.
  • Keywords
    III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; optical fibres; semiconductor lasers; 1.55 mum; InGaAsP-InP; InGaAsP/InP; distributed Bragg reflector lasers; fabrication processing; flat-end singlemode fibre; integrated DBR lasers; lasing characteristics; lateral directions; low-loss fibre coupling; misalignment tolerance; optical communication; photonic ICs; selective growth; tapered waveguide; vertical directions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931381
  • Filename
    253995