DocumentCode
999709
Title
Monolithically integrated DBR lasers with simple tapered waveguide for low-loss fibre coupling
Author
Kasaya, K. ; Kondo, Yuta ; Okamoto, Mitsuo ; Mitomi, O. ; Naganuma, M.
Author_Institution
NTT Opto-Electron. Labs., Atsugi, Japan
Volume
29
Issue
23
fYear
1993
Firstpage
2067
Lastpage
2068
Abstract
Describes InGaAsP/InP 1.55 mu m distributed Bragg reflector lasers monolithically integrated with a laterally tapered waveguide on the output facet. The tapered waveguide region of the devices has a thick partially clad p-InP layer grown by selective growth. The growth and fabrication processing steps were the same as those used to make conventional DBR laser diodes. The lasers demonstrate good lasing characteristics, low-loss coupling of less than 2.8dB and +/-2 mu m misalignment tolerance with a flat-end singlemode fibre in both the lateral and vertical directions.
Keywords
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; optical fibres; semiconductor lasers; 1.55 mum; InGaAsP-InP; InGaAsP/InP; distributed Bragg reflector lasers; fabrication processing; flat-end singlemode fibre; integrated DBR lasers; lasing characteristics; lateral directions; low-loss fibre coupling; misalignment tolerance; optical communication; photonic ICs; selective growth; tapered waveguide; vertical directions;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931381
Filename
253995
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