Dynamic dipole-dipole interactions between excitons in quantum dots of different sizes

Author

Matsueda, Hideaki ; Leosson, Kristjan ; Xu, Zhangcheng ; Hvam, Jorn M. ; Ducommun, Yann ; Hartmann, Arno ; Kapon, Eli

Author_Institution

Dept. of Inf. Sci., Kochi Univ., Japan

Volume

3

Issue

2

fYear

2004

fDate

6/1/2004 12:00:00 AM

Firstpage

318

Lastpage

327

Abstract

A model of the resonance dynamic dipole-dipole interaction between excitons confined in quantum dots (QDs) of different sizes at close enough distance is given in terms of parity inheritance and exchange of virtual photons. Microphotoluminescence spectra of GaAs-AlGaAs coupled QDs are proposed to be analyzed by this model, including features created by high-speed random switching, depending on the carrier configuration in and around the QD pair, between the dipole-dipole split states and the nonsplit states to give double peaks at both of the QDs.

Keywords

III-V semiconductors; aluminium compounds; excitons; gallium arsenide; photoluminescence; semiconductor quantum dots; GaAs-AlGaAs; GaAs-AlGaAs coupled QD; dipole-dipole nonsplit states; dipole-dipole split states; excitons; high-speed random switching; microphotoluminescence spectra; quantum dots; resonance dynamic dipole-dipole interactions; virtual photons exchange; Carrier confinement; Coherence; Excitons; Laboratories; Optical materials; Physics; Quantum computing; Quantum dots; Resonance; US Department of Transportation; $mu$-PL; Microphotoluminescence; QDs; RDDDI; VPHs; quantum dots; quantum gates; resonance dynamic dipole–dipole interaction; virtual photons;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2004.828559

Filename

1303529