Impact of Auger Recombination on Charge Collection of a 6H-SiC Diode by Heavy Ions

Author

Onoda, S. ; Ohshima, T. ; Hirao, T. ; Mishima, K. ; Hishiki, S. ; Iwamoto, N. ; Kawano, K.

Author_Institution

Japan Atomic Energy Agency (JAEA), Gunma

Volume

54

Issue

6

fYear

2007

Firstpage

2706

Lastpage

2713

Abstract

Charge collection efficiency (CCE) generated in a 6H-SiC p⁺n diode by impact of heavy ions was evaluated by the transient ion beam induced current (TIBIC) technique. Numerical analysis by using technology computer aided design (TCAD) concludes that the Auger recombination process reduces CCE. Comparing experimentally measured CCEs with calculated ones revealed that the ambipolar Auger coefficient of about 3 times 10^-29 cm⁶/s.

Keywords

Auger effect; electron-hole recombination; p-i-n diodes; silicon compounds; technology CAD (electronics); Auger recombination process; SiC; TCAD; TIBIC technique; charge collection efficiency; heavy ions; numerical analysis; p⁺-n diode; technology computer aided design; transient ion beam induced current technique; Alpha particles; Current measurement; Diodes; Ion beams; Large Hadron Collider; Particle measurements; Radiation detectors; Silicon carbide; Spontaneous emission; Thermal conductivity; 6H-SiC diode; CCE; PHD; TCAD; TIBIC system; auger recombination;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2007.908459

Filename

4395401