DocumentCode
999807
Title
p-i-n diode reverse-bias switching via inductive discharging
Author
Georgopoulos, C.J. ; Makios, V.
Author_Institution
University of Thrace, School of Engineering, Xanthi, Greece
Volume
14
Issue
23
fYear
1978
Firstpage
723
Lastpage
725
Abstract
Reverse switching of high-power p-i-n diodes can be achieved by inductive discharge. In this type of switching there is a direct interaction between the energy-storing element and the p-i-n diodes, and the current and voltage waveforms follow somewhat different equations to those of a conventional driving circuit.
Keywords
semiconductor diodes; semiconductor switches; energy storing element; inductive discharging; p-i-n diodes; reverse bias switching;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19780488
Filename
4249573
Link To Document