Title :
p-i-n diode reverse-bias switching via inductive discharging
Author :
Georgopoulos, C.J. ; Makios, V.
Author_Institution :
University of Thrace, School of Engineering, Xanthi, Greece
Abstract :
Reverse switching of high-power p-i-n diodes can be achieved by inductive discharge. In this type of switching there is a direct interaction between the energy-storing element and the p-i-n diodes, and the current and voltage waveforms follow somewhat different equations to those of a conventional driving circuit.
Keywords :
semiconductor diodes; semiconductor switches; energy storing element; inductive discharging; p-i-n diodes; reverse bias switching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780488