• DocumentCode
    999842
  • Title

    p+¿n hyperabrupt GaAs varactors grown by molecular-beam epitaxy

  • Author

    Covington, D.W. ; Hicklin, W.H.

  • Author_Institution
    Georgia Institute of Technology, Engineering Experiment Station, Atlanta, USA
  • Volume
    14
  • Issue
    24
  • fYear
    1978
  • Firstpage
    752
  • Lastpage
    753
  • Abstract
    Gallium-arsenide p¿n junction hyperabrupt varactor diodes have been grown by molecular-beam epitaxy. Near the junction the donor profile at depth x tracked x¿1.2. A capacitance ratio C0/C12 of 10 is observed for bias voltages of 0 and 12 V.
  • Keywords
    III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; p-n homojunctions; varactors; GaAs; MBE; capacitance ratio; molecular beam epitaxial growth; p-n junction hyperabrupt varactor diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780509
  • Filename
    4249577
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=999842