Free Charge Carriers Trapping Properties in Neutron-Irradiated DOFZ Silicon Pad Detectors

Author

Weber, Jens ; Klingenberg, Reiner

Author_Institution

Tech. Univ. Dortmund, Dortmund

Volume

54

Issue

6

fYear

2007

Firstpage

2701

Lastpage

2705

Abstract

Silicon pad-detectors fabricated from diffused oxygenated silicon were irradiated with reactor neutrons with fluences between 1 times 10¹⁴ n_eq/cm² and 1 times 10¹⁵ n_eq/cm². The transient current technique was used to measure the trapping probability for holes and electrons. The results obtained support the model of a linear increase with fluence. Also the temperature dependence of the trapping time constant for electrons is investigated. This temperature dependence was found independent on the irradiated fluence.

Keywords

electron traps; hole traps; neutron effects; silicon radiation detectors; Si; free charge carrier trapping properties; neutron-irradiated DOFZ silicon pad detectors; oxygenated silicon; reactor neutrons; silicon pad-detector fabrication; transient current technique; trapping time constant; Charge carrier processes; Charge carriers; Electrodes; Electron traps; Inductors; Large Hadron Collider; Neutrons; Radiation detectors; Silicon radiation detectors; Temperature dependence; Charge collection; LHC; SuperLHC; neutron induced radiation damage of silicon pad detectors; transient current technique; trapping time;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2007.910855

Filename

4395408