Title :
Planar n-GaAs/N-GaAlAs microwave diodes
Author :
Lechner, A. ; Kneidinger, M. ; Kuch, R.
Author_Institution :
Technical University Vienna, Institute fÿr Industrielle Elektronik, Vienna, Austria
Abstract :
Planar microwave diodes have been fabricated from n-GaAs/N-(GaAl)As heterojunction layers grown on semi-insulating substrates by l.p.e. The diodes have successfully been used for detection and, for the first time, for down-conversion of X- and Ku-band signals, indicating that this type of diode is an attractive substitute for the Schottky-barrier diode.
Keywords :
III-V semiconductors; gallium arsenide; liquid phase epitaxial growth; microwave detectors; p-n heterojunctions; semiconductor diodes; solid-state microwave devices; Ku-band; LPE; SHF; X-band; microwave down conversion; n-GaAs/N-(GaAl)As heterojunction layers; n-GaAs/N-GaAlAs microwave diodes; planar microwave diodes; semiinsulating substrates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800001
