Title :
Model for return-beam-induced noise generation in GaAlAs semiconductor lasers
Author :
Hirose, Y. ; Ogura, Yusuke
Author_Institution :
Yokohama National University, Department of Electrical Engineering, Faculty of Engineering, Yokohama, Japan
Abstract :
The nature of the output intensity fluctuation noise generated when semiconductor lasers are irradiated by their own output beam are described. A possible explanation of their generation mechanism is presented utilising a simple rate equation model with an additional term accounting for the multiple reflections of the laser beam.
Keywords :
III-V semiconductors; gallium arsenide; optical noise measurement; semiconductor junction lasers; GaAlAs semiconductor lasers; multiple reflections; noise generation model; output intensity fluctuation noise; rate equation model; return beam induced noise generation; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800145
