Title :
10 GHz/10 W internally matched flip-chip GaAs power f.e.t.s
Author :
Mitsui, Yoshifuru ; Kobiki, M. ; Wataze, M. ; Segawa, K. ; Otsubo, M. ; Ishii, Takuro
Author_Institution :
Mitsubishi Electric Corporation, Semiconductor Laboratory, Itami, Japan
Abstract :
A flip-chip GaAs power f.e.t. delivering 10 W power output with 3 dB gain has been realised at 10 GHz by using a newly developed internal matching technique, in which the f.e.t. chips are directly connected to the lumped capacitors in the matching networks.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; flip-chip devices; gallium arsenide; power transistors; solid-state microwave devices; 10 GHz 10 W FET; 3 dB gain; GaAs power FET; SHF; X-band; flip chip; internal matching technique; lumped capacitors; performance; solid state microwave devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800147
