• DocumentCode
    999995
  • Title

    Orientation dependence of ballistic electron transport and impact ionisation

  • Author

    Shichijo, H. ; Hess, K. ; Stillman, G.E.

  • Author_Institution
    University of Illinois at Urbana-Champaign, Department of Electrical Engineering & Coordinated Science Laboratory, Urbana, USA
  • Volume
    16
  • Issue
    6
  • fYear
    1980
  • Firstpage
    208
  • Lastpage
    210
  • Abstract
    The orientation dependence of ballistic electron transport in GaAs is investigated using the pseudopotential band structure. It is shown that a single scattering event can permit electron impact-ionisation threshold energies to be reached in the ¿111¿ and ¿100¿ directions. This is in contrast to ballistic calculations, where simple thresholds do not exist in these directions.
  • Keywords
    III-V semiconductors; carrier mobility; gallium arsenide; impact ionisation; GaAs; ballistic electron transport; impact ionisation; orientation dependence; pseudopotential band structure; single scattering event;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800149
  • Filename
    4249594
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=999995