Title :
Orientation dependence of ballistic electron transport and impact ionisation
Author :
Shichijo, H. ; Hess, K. ; Stillman, G.E.
Author_Institution :
University of Illinois at Urbana-Champaign, Department of Electrical Engineering & Coordinated Science Laboratory, Urbana, USA
Abstract :
The orientation dependence of ballistic electron transport in GaAs is investigated using the pseudopotential band structure. It is shown that a single scattering event can permit electron impact-ionisation threshold energies to be reached in the ¿111¿ and ¿100¿ directions. This is in contrast to ballistic calculations, where simple thresholds do not exist in these directions.
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; impact ionisation; GaAs; ballistic electron transport; impact ionisation; orientation dependence; pseudopotential band structure; single scattering event;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800149
