شماره ركورد
1199267
عنوان مقاله
ﺧﻮاص اﭘﺘﯿﮑﯽ ﺑﻠﻮر ﻓﻮﺗﻮﻧﯿﮑﯽ دياﻟﮑﺘﺮﯾﮏ ﺗﮏ ﺑﻌﺪي ﺷﺒﻪ ﻓﻠﺰ ـ دياﻟﮑﺘﺮﯾﮏ
عنوان به زبان ديگر
Optical properties of one dimensional quasi metaldielectric photonic crystal
پديد آورندگان
داودي، ﺳﻤﯿﻪ ﭘﮋوﻫﺸﮕﺎه ﻋﻠﻮم وﻓﻨﻮن ﻫﺴﺘﻪ اي - ﭘﮋوﻫﺸﮑﺪه ﻟﯿﺰر واﭘﺘﯿﮏ، تهران، ايران , ﻗﺸﻠﺎﻗﯽ، ﻣﺮﯾﻢ ﭘﮋوﻫﺸﮕﺎه ﻋﻠﻮم وﻓﻨﻮن ﻫﺴﺘﻪ اي - ﭘﮋوﻫﺸﮑﺪه ﻟﯿﺰر واﭘﺘﯿﮏ، تهران، ايران
تعداد صفحه
4
از صفحه
1
از صفحه (ادامه)
0
تا صفحه
4
تا صفحه(ادامه)
0
كليدواژه
ﺑﻠﻮر ﻓﻮﺗﻮﻧﯿﮑﯽ ﺗﮏ ﺑﻌﺪي ﺷﺒﻪ ﻓﻠﺰ ـ دياﻟﮑﺘﺮﯾﮏ , ﺷﺮط ﺑﺮاگ , ﻗﻄﺒﯿﺪﮔﯽ
چكيده فارسي
در اﯾﻦ ﻣﻘﺎﻟﻪ ﺑﻪ ﺑﺮرﺳﯽ رﻓﺘﺎر ﺑﻠﻮر ﻓﻮﺗﻮﻧﯿﮑﯽ ﺗﮏ ﺑﻌﺪي ﺷﺒﻪ ﻓﻠﺰ ـ دياﻟﮑﺘﺮﯾﮏ ﺑﺎ ﺳﺎﺧﺘﺎر اﭘﺘﯿﮑﯽ ﺑﺎ ﺗﺮﺗﯿﺐ ﻟﺎﯾﻪﻫﺎ ﺑﻪ ﺻﻮرت Glass/(MgF2-Ge)N/Air ﭘﺮداﺧﺘﻪ ﺷﺪه اﺳﺖ. ﺷﺒﯿﻪﺳﺎزي اﯾﻦ ﺑﻠﻮر اﻧﺠﺎم ﺷﺪ و ﻃﯿﻒ ﻋﺒﻮري آن رﺳﻢ ﮔﺮدﯾﺪ. ﻃﺒﻖ ﻣﺤﺎﺳﺒﺎت ﺷﺒﯿﻪﺳﺎزي ﺷﺪه و رﺳﻢ ﻧﻤﻮدار ﻃﯿﻒ ﻋﺒﻮري، اﯾﻦ ﺳﺎﺧﺘﺎر داراي ﺷﮑﺎف ﺑﺎﻧﺪ ﻓﻮﺗﻮﻧﯿﮑﯽ ﭘﻬﻦ ﺑﻮده اﺳﺖ و ﻫﻤﭽﻨﯿﻦ ﻃﻮل ﻣﻮج ﻣﺮﮐﺰي آن ﺑﺎ اوﻟﯿﻦ ﺗﻮﻗﻒ ﺑﺎﻧﺪ آن ﺑﺎ ﺷﺮط ﺑﺮاگ ﺗﻄﺎﺑﻖ ﺧﻮﺑﯽ دارد. ﺑﺎ اﻓﺰاﯾﺶ زاوﯾﻪ ﺗﺎﺑﺶ ﻧﻮر ﻓﺮودي، ﭘﻬﻨﺎي ﺑﺎﻧﺪ ﻗﻄﺒﯿﺪﮔﯽ P ﮐﺎﻫﺶ ﯾﺎﻓﺘﻪ اﺳﺖ و دو ﻗﻄﺒﯿﺪﮔﯽ S و P از ﯾﮑﺪﯾﮕﺮ ﺟﺪا ﻣﯽﺷﻮﻧﺪ. اﻓﺰاﯾﺶ ﺗﻌﺪاد ﺗﻨﺎوب، ﭘﻬﻨﺎي ﺷﮑﺎف ﺑﺎﻧﺪ را ﺗﻐﯿﯿﺮ ﻧﻤﯽدﻫﺪ وﻟﯽ ﻣﯽﺗﻮاﻧﺪ ﻋﻤﻖ ﺷﮑﺎف ﺑﺎﻧﺪ را زﯾﺎد ﮐﻨﺪ. ﻫﻤﭽﻨﯿﻦ ﺑﺎ اﻓﺰاﯾﺶ ﻓﺎﮐﺘﻮر اﻧﺒﺎﺷﺖ )ﺿﺮﯾﺐ ﺗﻌﺪاد ﻟﺎﯾﻪﻫﺎ در ﻫﺮ ﺑﺨﺶ(، ﺷﮑﺎف ﺑﺎﻧﺪ ﻓﻮﺗﻮﻧﯿﮑﯽ اﻓﺰاﯾﺶ ﯾﺎﻓﺘﻪ اﺳﺖ و در ﻧﺘﯿﺠﻪ ﺑﻪ ﺳﻤﺖ ﻃﻮل ﻣﻮجﻫﺎي ﺑﻠﻨﺪﺗﺮ اﻧﺘﻘﺎل ﭘﯿﺪا ﻣﯽﮐﻨﺪ.
چكيده لاتين
in this paper, the behavior of one dimensional quasi metal-dielectric photonic crystal
with the structure of Glass/ (MgF2-Ge)N /Air was investigated. According to
simulation calculations and by Charting of the transmission spectrum, the photonic
band gap of this structure is wide, also its central wavelength with the band's first stop
is in good agreement with the Bragg condition. By increasing the angle of the incident light
radiation, the bandwidth of P polarization decreases and the two polarization S and P are
separated. Increasing the number of frequencies, wide band gap does not change, but its
depth increases. Also by increasing filling factor, photonic band gap has increased and is
shifted towards longer wavelengths.
سال انتشار
1395
عنوان نشريه
فيزيك اتمي - مولكولي
فايل PDF
8280804
لينک به اين مدرک