شماره ركورد :
1400708
عنوان مقاله :
An FVF-Based Gm-Enhanced fully balanced Preamplifier
پديد آورندگان :
Faraji Baghtash ، Hassan Sahand University of Technology - Faculty of Electrical Engineering , Kargar ، Mona Iranian Space Research Center (ISRC)
از صفحه :
111
تا صفحه :
119
كليدواژه :
FVF , OTA , Low power , Low voltage , CCII , Preamplifier
چكيده فارسي :
A High-gain, fully balanced preamplifier is presented. The proposed structure advantages flipped voltage follower scheme to achieve a compact current conveyor with very low input impedance. The presented current conveyor then is used as a core element to realize a high-gain, gm-enhanced trans-conductance amplifier. The presented amplifier is suitable for application as a preamplifier. The high gain of amplifier makes it very suitable to be configured in a feedback form to deliver a high-precision predefined or programmable amplification gain. The proposed structure draws a very low power of 150nW from a 0.6V supply voltage. The Spectre Post-layout simulations with TSMC 180nm CMOS technology have been performed. The proposed amplifier exhibits an open-loop DC gain of 141.5dB and 3-dB frequency bandwidth of 2.4kHz at 60dB closed-loop configuration. The load capacitance is set to be 5pF. The proposed structure also delivers high CMRR and PSRR values of 148.3dB and 153.7dB, respectively.
عنوان نشريه :
مهندسي برق دانشگاه تبريز
عنوان نشريه :
مهندسي برق دانشگاه تبريز
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