• شماره ركورد
    1400708
  • عنوان مقاله

    An FVF-Based Gm-Enhanced fully balanced Preamplifier

  • پديد آورندگان

    Faraji Baghtash ، Hassan Sahand University of Technology - Faculty of Electrical Engineering , Kargar ، Mona Iranian Space Research Center (ISRC)

  • از صفحه
    111
  • تا صفحه
    119
  • كليدواژه
    FVF , OTA , Low power , Low voltage , CCII , Preamplifier
  • چكيده فارسي
    A High-gain, fully balanced preamplifier is presented. The proposed structure advantages flipped voltage follower scheme to achieve a compact current conveyor with very low input impedance. The presented current conveyor then is used as a core element to realize a high-gain, gm-enhanced trans-conductance amplifier. The presented amplifier is suitable for application as a preamplifier. The high gain of amplifier makes it very suitable to be configured in a feedback form to deliver a high-precision predefined or programmable amplification gain. The proposed structure draws a very low power of 150nW from a 0.6V supply voltage. The Spectre Post-layout simulations with TSMC 180nm CMOS technology have been performed. The proposed amplifier exhibits an open-loop DC gain of 141.5dB and 3-dB frequency bandwidth of 2.4kHz at 60dB closed-loop configuration. The load capacitance is set to be 5pF. The proposed structure also delivers high CMRR and PSRR values of 148.3dB and 153.7dB, respectively.
  • عنوان نشريه
    مهندسي برق دانشگاه تبريز
  • عنوان نشريه
    مهندسي برق دانشگاه تبريز