كليدواژه :
ضريب عبور , چاه كوانتومي تايي , نيمه رساناي فرانازك , فيزيك , ساختار تونل زني , سدپتانسيل , transmission coefficient , multilayer structures , ultra thin film semiconductor
چكيده لاتين :
A theoretical study of resonant tunneling in multilayered GaAIAs/GaAs structures are presented. The spectrum of resonant energies and its dependence on the barrier structure are analyzed from calculated profiles of barrier transparency versus energy, and from current voltage characteristics computed at selected temperatures and Fermi levels. The present formalism is based on the effective mass approximation and results are via direct numerical evaluations.
