ساخت نانولوله هاي كربني چند ديواره به روش انباشت بخار شيميايي پلاسمايي )PECVO( و بررسي نقش كاتاليزور و دما و مدت زمان آزمايش بر رشد نانولوله ها

Fabrication and study of carbon nanotube by plasma enhanced chemical vapor deposition (PECVD)

We have successfully grown carbon nanotubes on cobalt coated silicon substrates at a temperature below 800 °C using PECVD method . In this experiment ethylene and nitrogen gases are used as carbon source and diluting respectively . A thin film of cobalt layer is used as the catalyst and its role has been shown to be a basic factor in the growth of nanotube. Also, the temperature is studied as another important factor. SEM micrographs indicate the evolution of nanotubes at a plasma current of 8mA. At lower currents, however, growth is insignificant. The length of nanotubes depends on the time of deposition and increases with time. Also, the diameter of tubes is a function of the size of the catalyst islands.