يافته هاي نوين در مشخصات و اثرات كانال كوچك ترانزيستورهاي اثرميداني نانوتيوب كربن دوگيتي

Novel Attributes in the characteristics and short channel effects of double gate carbon nanotube field-effect transistors

Abstract: In this paper, the short channel effects of different gate configurations and geometry parameters of carbon nanotube (CIST) field-effect transistors with doped source and drain extensions are investigated. The simulation b based on the self-consistent solution of the three-dimensional Poisson equation and Schrodinger equation with open boundary conditions, jLiLJ - ** jLtjl ^t-ijtf - * ^ (J*>li^0 ^VA^ jb—oj Ijl^j, JU k ^J^f (^If^-jj within the nonequilibrium Greenʹs function formalism. Simulation results show that double gate structure offers quasi-ideal subthreshold slope and drain induced barrier lowering even for the rather thick oxide (Snm). Then, the investigation of electrical characteristics of double gate carbon nanotube field-effect transistor (DG-CNTFET) shows that as the CNT normalized density or CNT diameter increases, the current in the on-state increases as well Also, the off-state current in DG-CNTFET decreases with increasing drain voltage. Furthermore, in the negative gate voltages, for a large drain voltage, increasing in drain current due to band to band tunneling requires a larger negative gate voltage, and for low drain voltage, resonant states appear.