Resonant Tunneling High Electron Mobility Transistor SPICE Model and Application to a New XOR Structure

This paper investigates the operation of the resonant-tunneling high electron mobility transistor (RTHEMT) and presents a novel sub-circuit model for simulating the RTHEMT in the SPICE simulator. Then, an innovative structure for two-input exclusive OR (XOR) gate based on the RTHEMT is introduced and characteristics of this gate are discussed. Details of design, input and output values and margins, delay of each transition, maximum operating frequency, static and dynamic power dissipation of new XOR gate is calculated using the RTHEMT model and discussed in detail.