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> 100 Gbit/s time-domain processing techniques optical packet switching
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>10/sup 21/ W/cm/sup 2/ laser based upon large aperture Ti:sapphire disk amplifiers
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>100 ° C 10 Gbit/s directly modulated laser incorporating a novel semi-insulating buried heterostructure
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>1GHz Optically Excited Vibrations of a Micron-Scale On-Chip Sphere
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>20% efficient 80 ?m thin industrial-type large-area solar cells from 100 ?m Sawn c-Si Wafers
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>20%-efficient pulsed frequency doubling of 1532 nm in periodically poled silica fibres
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>30 G Omega isolation of GaAs devices on doped Si via undoped buffer layers-application to symmetric self-electrooptic effect devices
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>30 G/spl Omega/ Isolation Of GaAs Devices On Doped Si Via Undoped Buffer Layers; Application To Symmetric Self-electro-optic Effect Devices
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>700W continuous-wave output power from single laser diode bar
