<< مقالات لاتين فني مهندسي >>
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+ BT Instability in P
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poly gate MOS structure
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+/− 30MVAr ATCO Cranberry SVC
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++document signature generation and insertion
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+117 dbm high-efficiency CMOS power amplifiers operating at high voltage for 24 GHz radar sensor
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+134 dBm IIP3, 0.4-1 GHz common-drain stage with its high frequency analysis
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+20 dBm output power balanced optical amplifier module
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+21 dBm erbium power amplifier pumped by a diode-pumped Nd:YAG laser
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+33 dBm output power from a full C-band cladding diode-pumped EDFA
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+5°X Micro Quartz Resonator by Lithographic Process
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+5V-only 32K EEPROM
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+Spaces: Intelligent Virtual Spaces for eGovernment
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+Three-step H
2
Se/Ar/H
2
S reaction of metal precursors for large area Cu(In,Ga)(Se,S)
2
with uniform Ga distribution
