بر اساس عنوان
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G16
G. E. Van Spankernen, Chairman, Buenos Aires Section and K. R. Patrick, Chairman, Montreal Section135
G-A Awards173
GA based optimized LS-SVM forecasting of short term electricity price in competitive power markets218
G-A news219
G-A news220
G-A news221
G-A news222
G-A news223
G-A news224
G-A news225
G-A news256
GA strategies for optimal planning of daily energy consumptions and user satisfaction in buildings257
GA Support System to Optimize the Sequence of Multi-level and Multi-tool Operations in CNC Machines258
GA to optimize approximate solutions of fuzzy relational equations for fuzzy systems or controllers272
GA&E News300
Ga309
Ga1-xInxAs/lnAsyP1-ylnP Photodiodes for 1.6μm to 2.4μm Spectral Region Grown by Low Pressure MO-CVD319
Ga0.47In0.53As field-effect transistors with a lattice-mismatched reduced leakage current GaAs gate336
GaAlAs/GaAs floating-gate memory devices with graded-gap injector grown by molecular-beam epitaxy356
GaAs - MESFETs with highly doped (1018cm-3) channels - An experimental and numerical investigation364
GaAs 100 kgate gate array with digital variable delay macro cell using meshed air bridge structure376
GaAs and Al0.2Ga0.8As solar cells with an indirect-bandgap Al0.8Ga0.2As emitter-heterojunction cells413
GaAs bipolar transistors with a Ga0.5In0.5P hole barrier layer and carbon-doped base grown by MOVPE648
GaAs low-power shift register and arithmetic logic unit for a high-speed digital signal processor712
GaAs MESFET´s on a truly insulating buffer layer: demonstration of the GaAs on insulator technology723
GaAs metal-insulator-semiconductor structure and field effect transistors grown by ex-situ approach777
GaAs MMIC variable gain optical receiver having an external open loop Automatic Gain control circuit873
GaAs n+ i902
GaAs optoelectronic integrated receiver array exhibiting high-speed response and little crosstalk954
GaAs power MESFET´s fabricated by ion implantation technology for 2.4-GHz wireless LAN applications
