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0 dB Bandpass Coupler
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0 dB coupler employing slot technique on planar microstrip
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0 to 10k in 20 Seconds: Bootstrapping Large-Scale DHT Networks
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0 to 3 GHz traveling-wave electrooptic modulator
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0–1 Programming problem based on sticker model
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0–4 GHz GaAs MMIC SPST switch
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0∶1 virtual-real duel
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0°-360° wide range digital phase shifters for large array antenna systems
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0, 1, 2, many — A classroom occupancy monitoring system for smart public buildings
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0.0012 mm2, 8 mw, single-to-differential converter with < 1.1% data cross error and <3.4 ps rms jitter up to 14 gbit/s
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0.0045 mm2 15.8 µW three-stage amplifier driving 10×-wide (0.15–1.5 nF) capacitive loads with >50° phase margin
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0.01-178.40 GHz wideband spectrum analyzer
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0.013 mm2, kHz-to-GHz-bandwidth, thirdorder all-pole lowpass filter with 0.52-to- 1.11 pW/pole/Hz efficiency
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0.01-50 GHz power detector MMICs
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0.018pm/°C athermal silicon nitride ring resonator by polymer cladding
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0.0234mm2/1mW DCO Based Clock/Data Recovery for Gbit/s Applications
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0.026µm2 high performance Embedded DRAM in 22nm technology for server and SOC applications
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0.0354mm 82μW 125KS/s 3-axis readout circuit for capacitive MEMS accelerometer
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0.03-cc Super-thin HBT-MMIC Power Amplifier Module with Novel Polyimide Film Substrate for W-CDMA Mobile Handsets
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0.04 Hz relative optical-frequency stability in a 1.5 mu m distributed-Bragg-reflector (DBR) laser
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0.05–2.5GHz wideband RF front-end exploiting noise cancellation and multi-gated transistors
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0.06 μm gate length metamorphic In0.52Al0.48 As/In0.53Ga0.47As HEMTs on GaAs with high f T and fMAX
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0.07 mm2, 2 mW, 75 MHz-IF, fourth-order BPF using source-follower-based resonator in 90 nm CMOS
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0.07 um InP HEMT MMIC Technology for G-band Power Amplifiers
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0.075 × 0.075 mm2 ultra-small 7.5 μm ultra-thin RFID-chip mounting technology
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0.1 μm In02Al08Sb-InAs HEMT low-noise amplifiers for ultralow-power applications
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0.1 μm Schottky-collector AlAs/GaAs resonant tunneling diodes
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0.1 – 10 GHz 0.5W high efficiency single transistor GaAs pHEMT power amplifier design using load-pull simulations
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0.1 μm (Al0.5Ga0.5)0.5In0.5P/In 0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy
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0.1 μm AlSb/InAs HEMTs with InAs subchannel
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0.1 μm enhancement-mode pseudomorphic InGaAs/InAlAs/InP HEMT
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0.1 μm Ga0.51In0.49P/In0.2Ga 0.8As PHEMT grown by GSMBE with high DC and RF performances
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0.1 μm gate length MODFETs with unity current gain cutoff frequency above 110 GHz
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0.1 μm gate length p-type Ge/Si0.4Ge0.6 MODFET with 135 GHz fmax
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0.1 μm high performance metamorphic In0.32Al0.68 As/In0.33Ga0.67As HEMT on GaAs using inverse step InAlAs buffer
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0.1 μm InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band
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0.1 /spl mu/m CMOS with shallow and steep source/drain extensions fabricated by using rapid vapor-phase doping (RVD)
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0.1 /spl mu/m delta-doped MOSFET using post low-energy implanting selective epitaxy
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0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMICs - a flight qualified technology
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0.1 /spl mu/m level contact hole pattern formation with KrF lithography by resolution enhancement lithography assisted by chemical shrink (RELACS)
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0.1 /spl mu/m RFCMOS on high resistivity substrates for system on chip (SOC) applications
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0.1 /spl mu/m T-gate p-type Ge/SiGe MODFETs
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0.1 /spl mu/m-rule MRAM development using double-layered hard mask
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0.1 CC 60% efficiency power amplifier multi-chip modules for personal digital cellular phones
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0.1 dB/cm waveguide losses in single-mode SOI rib waveguides
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0.1 Hz 4.0 PW Ti:Sapphire laser at CoReLS
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0.1 mJ pulses from a passively Q-switched fiber source
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0.1 mu m CMOS and beyond
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0.1 mu m CMOS devices using low-impurity-channel transistors (LICT)
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0.1 mu m contact metallization with SiH/sub 2/F/sub 2/-reduced CVD W
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0.1- mu m gate-length superconducting FET
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0.1 mu m MOVPE grown InAlAs/InGaAs HEMT´s with above 150 GHz operation capability
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0.1 mu m p-channel MOSFETs with 51 GHz f/sub T/
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0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer
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0.1 THz rectangular waveguide on GaAs semi-insulating substrate
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0.1 um n+-InAs-AlSb-InAs HEMT MMIC Technology for Phased-Array Applications
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0.1 V TO 1000 V AC voltage standard in the frequency range of 10 HZ to 30 MHZ
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0.1-µm Gate-length pseudomorphic HEMT´s
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0.1-μm T-gate Al-free InP/InGaAs/InP pHEMTs for W-band applications using a nitrogen carrier for LP-MOCVD growth
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0.1µm GaAs pHEMT technology and associated modelling for millimeter wave low noise amplifiers
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0.1-µm GaAs PHEMT W-band low noise amplifier MMIC using coplanar waveguide technology
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0.1–15THz generation using BNA (N-benzyl-2-methyl-4-nitroaniline) crystal
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0.1-μm InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD
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0.1-μm InAlP/InAlAs/InGaAs/InP HEMTs with improved breakdown voltages
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0.1μm InGaAs/InAlAs/InP HEMT low noise amplifiers with compact stacked cascode design and its de-bias effect induced failure (DBIF)
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0.1-μm p+-GaAs gate HJFET´s fabricated using two-step dry-etching and selective MOMBE growth techniques
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0.1-μm p+-GaAs gate HJFETs with fT=121 GHz fabricated using all dry-etching and selective MOMBE growth
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0.1-μm-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer
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0.1-/spl mu/m CMOS technology for high-speed logic and system LSIs with SiO/SiN/poly-Si/W gate-system
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0.1-/spl mu/m GaAs MESFET´s fabricated using ion-implantation and photolithography
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0.1/spl mu/m poly-Si thin film transistors for system-on-panel (SoP) applications
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0.1- \\mu text{m} Atomic Layer Deposition Al2O3 Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifiers
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0.10 μm graded InGaAs channel InP HEMT with 305 GHz fT and 340 GHz fmax
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0.11 /spl mu/m fully-depleted SOI CMOS devices with 26 nm silicon layer fabricated by bulk compatible process
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0.1-15 GHz AM and FM response of erbium-doped fibre amplifier
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0.12 μm transferred-substrate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on silicon wafer
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0.12 /spl mu/m hole pattern formation by KrF lithography for Giga bit DRAM
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0.12 /spl mu/m Optical Lithography Performance Using an Alternating DUV Phase Shift Mask
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0.12 /spl mu/m raised gate/source/drain epitaxial channel NMOS technology
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0.12-μm gate III-V nitride HFET´s with high contact resistances
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0.12μm P-MOSFETs with High-K and Metal Gate Fabricated in a Si Process Line on 200mm GeOI Wafers
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0.125 Terawatt Kilohertz Laser System
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0.13 μm Low Voltage Logic Based RF CMOS Technology with 115GHz fT and 80GHz fMAX
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0.13 μm CMOS Cartesian loop transmitter IC with fast calibration and switching scheme from opened to closed loop
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0.13 /spl mu/m 210 GHz f/sub T/ SiGe HBTs - expanding the horizons of SiGe BiCMOS
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0.13 /spl mu/m gate-length In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As metamorphic HEMTs on GaAs substrate
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0.13 /spl mu/m MONOS single transistor memory cell with separated source lines
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0.13 \\mu m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications
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0.13-μm CMOS Phase Shifters for X-, Ku-, and K-Band Phased Arrays
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0.13μm 210GHz fT SiGe HBTs - expanding the horizons of SiGe BiCMOS
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0.13µm CMOS power amplifier for Wireless Sensor Network applications
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0.13-µm CMOS tunable transconductor based on the body-driven gain boosting technique with application in Gm-C filters
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0.13μm 1.0V–1.5V supply digital blocks for 40-Gb/s optical communication systems
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0.13μm CMOS 230Mbps 21pJ/b UWB-IR transmitter with 21.3% efficiency
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0.13μm CMOS/DMOS platform technology with novel 8V/9V LDMOS for low voltage high-frequency DC-DC converters
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0.13-μm SiGe BiCMOS radio front-end circuits for 24-GHz automotive short-range radar sensors
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0.13μm SiGe BiCMOS technology for mm-wave applications
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0.13-μm 32-Mb/64-Mb embedded DRAM core with high efficient redundancy and enhanced testability
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0.13μm low voltage logic based RF CMOS technology with 115GHz fT and 80GHz fMAX
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0.13-μm low-κ-Cu CMOS logic-based technology for 2.1-gb high data rate read-channel
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0.13-μm RF CMOS and varactors performance optimization by multiple gate layouts
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0.13/spl mu/m CMOS SOI SP6T antenna switch for multi-standard handsets
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0.13?m CMOS low noise amplifier for 40GHz radio-over-fiber system
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0.13mJ all-fiberized Tm-doped fiber laser at low repetition rate
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0.13um 32Mb/64Mb embedded DRAM core with high efficient redundancy and enhanced testability
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0.1-42 GHz InP DHBT distributed amplifiers with 35 dB gain and 15 dBm output
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0.14THz high power millimeter wave generation from a relativistic surface wave oscillator
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0.14THz high speed data communication over 1.5 kilometers
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0.15 µm Channel-length MOSFET´s fabricated using e-beam lithography
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0.15 µm Channel-length MOSFETs fabricated using e-beam lithography
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0.15 μm passivated InP-based HEMT MMIC technology with high thermal stability in hydrogen ambient
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0.15 μm double modulation doped InAs-inserted-channel MODFETs: gate recess for optimum RF performances
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0.15 μm gate length InAlAs/InGaAs power metamorphic HEMT on GaAs substrate with extremely low noise characteristics
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0.15 μm gate length MHEMT technology for 77 GHz automotive radar applications
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0.15 μm PHEMT 80 Gb/s selector
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0.15 μm T-shaped gate fabrication for GaAs MODFET using phase shift lithography
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0.15 μm T-shaped gate pseudomorphic HEMT fabricated using a new optical lithographic technique
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0.15 /spl mu/m ArF excimer laser lithography using top surface imaging with high contrast silylation agent B(DMA)DS
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0.15 /spl mu/m CMOS process for high performance and high reliability
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0.15 /spl mu/m CMOS with high reliability and performance
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0.15 /spl mu/m delta-doped CMOS with on-field source/drain contacts
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0.15 /spl mu/m InGaAs/AlGaAs/GaAs HEMT production process for high performance and high yield V-band power MMICs
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0.15 /spl mu/m SOI DRAM technology incorporating sub-volt dynamic threshold devices for embedded mixed-signal & RF circuits
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0.15- \\mu\\hbox {m} -Gate InAlAs/InGaAs/InP E-HEMTs Utilizing Ir/Ti/Pt/Au Gate Structure
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0.15 dB/cm loss in Unibond SOI waveguides
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0.15 micron gate AlInAs/GaInAs MHEMT fabricated on GaAs using deep-UV phase-shifting mask lithography
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0.15 mu m GaAs MESFETs applied to ultrahigh-speed static frequency dividers
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0.15 mu m gate-length double recess pseudomorphic HEMT with f/sub max/ of 350 GHz
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0.15µm BiC-DMOS technology with novel stepped-STI N-channel LDMOS
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0.15-μm buried-channel p-MOSFETs with ultrathin boron-doped epitaxial Si layer
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0.15-μm RF CMOS technology compatible with logic CMOS for low-voltage operation
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0.15-nJ/b 3–5-GHz IR-UWB System With Spectrum Tunable Transmitter and Merged-Correlator Noncoherent Receiver
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0.15um Leff Buried Channel PFET Device Design
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0.15uM Y-Gate pHEMT Process Using Deep-UV Phase-Shift Lithography
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0.16-0.25 pJ/bit, 8 Gb/s Near-Threshold Serial Link Receiver With Super-Harmonic Injection-Locking
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0.18 μm 21-27 GHz CMOS UWB LNA with 9.3 ± 1.3 dB gain and 103.9 ± 8.1 ps group delay
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0.18 μm 3.1-10.6 GHz CMOS UWB LNA with 11.4±0.4 dB gain and 100.7± 17.4 ps group-delay
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0.18 μm BCD -High Voltage Gate (HVG) Process to address Advanced Display Drivers Roadmap
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0.18 μm CMOS integrated circuit design for impedance-based structural health monitoring
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0.18 μm CMOS low noise amplifier for 3-5 GHz ultra-wideband system
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0.18 μm CMOS Power Amplifier for Ultra-Wideband (UWB) System
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0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs
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0.18 µm CMOS UWB LNA with new feedback configuration for optimization low noise, high gain and small area
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0.18 µm fully integrated 900 MHz CMOS LNA with input and output on-chip matching for multi-standard mobile receiver
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0.18 μm CMOS process photodiode memory
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0.18 μm CMOS RF front-end chipset for FM-UWB based P-PAN receivers
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0.18 μm double-recessed III-nitride metal-oxide double heterostructure field-effect transistors
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0.18 μm 3-6 GHz CMOS broadband LNA for UWB radio
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0.18 μm CMOS and beyond
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0.18 μm CMOS backplane receiver with decision-feedback equalisation embedded
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0.18 μm CMOS dual-band UWB LNA with interference rejection
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0.18 μm CMOS LNA and mixer for wireless LAN applications
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0.18 μm CMOS sub-harmonic mixer for 2.4 GHz IEEE802.15.4 transceiver
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0.18 μm SiGe BiCMOS technology for wireless and 40 Gb/s communication products
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0.18 /spl mu/m CMOS Technology For High-performance, Low-power, And RF Applications
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0.18 /spl mu/m low voltage/low power RF CMOS with zero Vth analog MOSFETs made by undoped epitaxial channel technique
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0.18 /spl mu/m metal gate fully-depleted SOI MOSFETs for advanced CMOS applications
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0.18 /spl mu/m SBT-based embedded FeRAM operating at a low voltage of 1.1 V
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0.18 -THz orbictron-amplifier
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0.18 um dual Vt MOSFET process and energy-delay measurement
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0.18 um modular triple self-aligned embedded split-gate flash memory
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0.18μm CMOS dual-band low-noise amplifier for ZigBee development
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0.18-μm CMOS push-pull power amplifier with antenna in IC package
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0.18-μm fully-depleted silicon-on-insulator MOSFET´s
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0.18µm SiGe BiCMOS technology for fully-integrated front-end ICs capable of sub-300fs Ron × Coff switch performance
166
0.18μm 4.8GHz CMOS 1V LC VCO for wireless sensor networks
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0.18μm BCD technology platform with performance and cost optimized fully isolated LDMOS
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0.18μm CMOS limiting amplifier for 10Gb/s optical receiver
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0.18μ CMOS Gm-C digitally tuned filter for telecom receivers
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0.18-μm CMOS 10-Gb/s multiplexer/demultiplexer ICs using current mode logic with tolerance to threshold voltage fluctuation
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0.18-μm CMOS Bluetooth analog receiver with -88-dBm sensitivity
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0.18-μm CMOS equalization techniques for 10-Gb/s fiber optical communication links
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0.18-μm nondestructive readout FeRAM using charge compensation technique
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0.18/spl mu/m thin oxide CMOS transceiver front-end with integrated T/sub x//R/sub x/ commutator for low cost Bluetooth solutions
175
0.18um 3.1–10.6GHz CMOS UWB LNA with 25 ±1dB gain
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0.18um BCD technology with best-in-class LDMOS from 6 V to 45 V
177
0.18um CMOS integrated chipset for 5.8GHz DSRC systems with +10dBm output power
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0.18um CMOS Low-Noise Amplifier with two 2nd-order notch filters for Ultra-Wideband Wireless Receiver
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0.18-um CMOS Process Highly Sensitive Differential Optically Reconfigurable Gate Array VLSI
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0.18um CMOS receiver front-end for non-invasive cardiopulmonary monitoring
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0.18um CMOS Tradeoffs between Isolation, Latch-up and Junction Capacitance
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0.18um low voltage 12-bit successive-approximation-register analog-to-digital converter (SAR ADC)
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0.18-V input charge pump with forward body biasing in startup circuit using 65nm CMOS
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0.1-mW p-Si/β-FeSi2/n-Si double heterostructures light-emitting diodes operating at 1.6 μm at room temperature
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0.1-nm narrow bandwidth transmission of a 2.5-Gb/s spectrum-sliced incoherent light channel using an all-optical bandwidth expansion technique at the receiver
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0.1-nm slim bandwidth transmission of a 2.5-Gbit/s spectrum-sliced incoherent channel using an all-optical bandwidth expansion technique at the receiver
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0.2 μm Deep UV Generation using 0.4 μm Blue Laser Diode with Wavelength Tunable Cavity
188
0.2 μm AlGaAs/InGaAs pseudomorphic HEMT fabricated by optical lithography
189
0.2 μm AlSb/InAs HEMTs with 5 V gate breakdown voltage
190
0.2 μm gate length, non-alloyed P+-AlInAs/N-AlInAs/GaInAs JHEMTs with ft=62 GHz
191
0.2 μm LDD NMOSFETs fabricated by conventional optical lithography
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0.2 μm nMOSFET using EB exposure for all lithography processes
193
0.2 /spl mu/m analog CMOS with very low noise figure at 2 GHz operation
194
0.2 /spl mu/m T-gate InP/InGaAs/InP pHEMT with an InGaP diffusion barrier layer grown by LP-MOCVD using an N/sub 2/-carrier
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0.2 /spl mu/m T-gate InP/InGaAs/InP pHEMT with an InGaP diffusion barrier layer grown by LP-MOCVD using an N/sub 2/-carrier
196
0.2 cc HBT power amplifier module with 40% power-added efficiency for 1.95 GHz wide-band CDMA cellular phones
197
0.2 dB Gain Ripple - 20W- WCDMA Silicon MMIC
198
0.2 Micron length mushroom gate fabrication using a new single-level photoresist technique
199
0.2 Micron length T-shaped gate fabrication using angle evaporation
200
0.2 mu m gate length pseudomorphic HIGFET using novel selfaligned TiPtAu/WN T-gate technology for high-speed digital and millimetre wave applications
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0.2 mu m gate pseudomorphic inverted HEMT for high speed digital ICs
202
0.2- mu m gate-length atomic-planar doped pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.25/Ga/sub 0.75/As MODFETs with f/sub T/ over 120 GHz
203
0.2 mu m or less i-line lithography by phase-shifting-mask technology
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0.2 mu m T-shaped gate 2DEGFETs with an (InAs) (GaAs) short period superlattice channel on a GaAs substrate
205
0.2 THz wireless communication using plasma-wave transistor detector
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0.2 V 8T SRAM with improved bitline sensing using column-based data randomization
207
0.2 V Drive Voltage Substrate Removed Electro-Optic Mach–Zehnder Modulators With MQW Cores at 1.55 μm
208
0.2μm Gate AlGaAs/GaAs HIGFETt (Heterostructure Insulated gate FET) with a (111) face of n+-GaAs selectively grown by MOCVD
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0.2-μm n-channel and p-channel MOSFETs integrated on oxidation-planarized twin-tubs
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0.2-μm p/sup +/-n junction characteristics dependent on implantation and annealing processes
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0.2μm T-gate InP/InGaAs/ InP pHEMT with an InGaP diffusion barrier layer grown by LP-MOCVD using an N2-carrier
212
0.2-μm fully-self-aligned Y-shaped gate HJFET´s with reduced gate-fringing capacitance fabricated using collimated sputtering and electroless Au-plating
213
0.2-μm gate AlGaAs/GaAs HIGFET (heterostructure insulated gate FET) with a (111) face of n+-GaAs selectively grown by MOCVD
214
0.2-μm gate-length InGaP-InGaAs DCFETs for C-band MMIC amplifier applications
215
0.2μm gatelength, non-alloyed AlInAs/GaInAs JHEMTs with extrinsic ft=62 GHz
216
0.2- \\mu{\\rm m} AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition {\\rm Al}_{2}</a></div> <div class='valueDiv recordListRow'><div class='rowCountCircle'>217</div><a href='49/65906.htm'>0.2-<formula formulatype= \\mu{\\rm m} InP/GaAsSb DHBT Power Performance With 10 {\\rm mW}/\\mu{\\rm m}^{2} and 2
218
0.22 THz sheet beam TWT amplifier: System design and analysis
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0.22 THz TWT based on the double corrugated waveguide
220
0.228 μm2 trench cell technologies with bottle-shaped capacitor for 1 Gbit DRAMs
221
0.23 mm thick high permeability grain oriented Si-steel
222
0.23 mu m gate length MODFETs on InAlAs/InGaAs/InP heterostructure grown by MOVPE
223
0.248μm2 and 0.334μm2 conventional bulk 6T-SRAM bit-cells for 45nm node low cost - general purpose applications
224
0.24-um CMOS technology for Bluetooth power applications
225
0.25 µm CMOS technology using P+polysilicon gate PMOSFET
226
0.25 × 106bit/in2NDRO coupled film memory elements
227
0.25 μm emitter InP/InAlGaAs/GaAsSb double heterojunction bipolar transistor with passivation ledge exhibiting a current gain of over 100
228
0.25 μm Self-Aligned AlGaN/GaN High Electron Mobility Transistors
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0.25 μm All Level e-Beam Pseudomorplhic AlGaAs/InGaAs MODFET with ft over 65 GHz
230
0.25 μmCMOS with N2O nitrided gate oxides
231
0.25 μm CMOS resistive ring subthreshold mixer
232
0.25 μm emitter InP SHBTs with fT = 550 GHz and BVCEO > 2V
233
0.25 μm gate length CMOS devices for cryogenic operation
234
0.25 μm gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high fT
235
0.25 μm integrated circuit yield model design and validation
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0.25 μm low power CMOS devices and circuits from 8 inch SOI materials
237
0.25 μm SOI technologies performance for low-power radio-frequency applications
238
0.25 /spl mu/m CMOS and BiCMOS single-chip direct-conversion Doppler radars for remote sensing of vital signs
239
0.25 /spl mu/m CMOS/SIMOX gate array LSI
240
0.25 /spl mu/m merged bulk DRAM and SOI logic using patterned SOI
241
0.25 /spl mu/m salicide CMOS Technology Thermally Stable Up To 1,000/spl deg/C With High TDDB Reliability
242
0.25 ?m AlGaN/GaN HEMT nonlinearity modelling and characterization over a wide temperature range
243
0.25 micrometre smart power technology optimised for wireless and consumer applications
244
0.25 mu m gate inverted HEMTs for an ultra-high speed DCFL dynamic frequency divider
245
0.25 mu m gate length N-InGaP/InGaAs/GaAs HEMT DCFL circuit with lower power dissipation than high-speed Si CMOS circuits
246
0.25- mu m gate millimeter-wave ion-implanted GaAs MESFETs
247
0.25 mu m PHEMT X-band multifunction LNA MMIC with T/R switch and attenuator achieves 1.85 dB noise figure
248
0.25 um NMOS transistor with nitride spacer: reduction of the short channel effect by optimisation of the gate reoxidation process and reliablity
249
0.25 x 106 bit/in2 nondestructive readout coupled-film memory elements [Digests]
250
0.25μ m CMOS analog multiplier for polynomial predistorter
251
0.25μm CMOS Dual Feedback Wide-Band UHF Low Noise Amplifier
252
0.25μm, 20V high performance complementary bipolar transistor with dual EPI and oxide-filled deep trench isolation for high frequency DC-DC converters
253
0.25–4 ns 185 MS/s 4-bit pulse-shrinking time-to-digital converter in 130 nm CMOS using a 2-step conversion scheme
254
0.25-μm BiCMOS receivers for normal and micro GSM900 and DCS 1800 base stations
255
0.25μm In0.52Al0.48As/In0.53Ga0.47As/InAs0.3P0.7 composite channel HEMTs with an fT of 115GHz
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0.25-μm pseudomorphic HEMTs processed with damage-free dry-etch gate-recess technology
257
0.25/spl mu/m CMOS and BiCMOS single-chip direct-conversion doppler radar for remote sensing of vital signs
258
0.25/spl mu/m Contact Hole Filling by Al-Ge Reflow Sputtering
259
0.25/spl mu/m pHEMT 40Gb/s E/O modulator drivers
260
0.25/spl mu/m W-polycide Dual Gate And Buried Metal On Diffusion Layer (BMD) Technology For DRAM-embedded Logic Devices
261
0.25?m BiCMOS system-on-chip with four transceivers for Ka-band active reflectarrays
262
0.25V FDSOI CMOS technology for ultra-low voltage applications
263
0.27-dB/km attenuation achieved by MSP preform process [optical fibers]
264
0.27-TW, sub-17-fs laser system at 1 kHz
265
0.29-/spl mu/m/sup 2/ trench cell technologies for 1G-bit DRAMs with open/folded-bit-line layout and selective growth technique
266
0.2-dB gain excursion AGC-EDFA with a high speed VOA for 100-channel add/drop equivalent operation
267
0.2GHz?3GHz UWB antenna with two narrow-band suppression
268
0.2V adiabatic NC-FinFET with 0.6mA/µm ION and 0.1nA/µm IOFF
269
0.3 µm Gate length super low noise GaAs MESFET
270
0.3 μm BiCMOS technology for mixed analog/digital application systems
271
0.3 μm mixed analog/digital CMOS technology for low-voltage operation
272
0.3 dB minimum noise figure at 2.5 GHz of 0.13 μm Si/Si0.58 Ge0.42 n-MODFETs
273
0.3 THz Wave Irradiation on Living Bodies through a Catheter Transmitter
274
0.3 to 1.5V embedded SRAM with device-fluctuation-tolerant access-control and cosmic-ray-immune hidden-ECC scheme
275
0.3 V/sub pp/ single-drive push-pull InP Mach-Zehnder modulator module for 43-Gbit/s systems
276
0.3 W cw red microchip VECSEL
277
0.3 W CW single-spatial-mode operation from large-core ARROW-type diode lasers
278
0.3-μm gate length p-channel AlGaAs/InGaAs heterostructure field effect transistors with high cut-off frequency
279
0.3-μm gate-length enhancement mode InAlAs/InGaAs/InP high-electron mobility transistor
280
0.3-µm gate-length metamorphic AlInAs/GaInAs HEMTs on Silicon substrates by MOCVD
281
0.3–4.3 GHz Frequency-Accurate Fractional- N Frequency Synthesizer With Integrated VCO and Nested Mixed-Radix Digital text{V}_{math\\rm {T}} AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal
291
0.34-THz Wireless Link Based on High-Order Modulation for Future Wireless Local Area Network Applications
292
0.35 μm 22μW Multiphase Programmable Clock Generator for Circular Memory SC FIR Filter For Wireless Sensor Applications
293
0.35 µm AMS silicon MOSFET for continous-wave (CW) sub-THz detection in room temperature
294
0.35 μm, 43 μΩcm2, 6 mΩ power MOSFET to power future microprocessor
295
0.35 /spl mu/m CMOS COFDM receiver chip for terrestrial digital video broadcasting
296
0.35 dB loss 20 dB coupling directional coupler integrated in 130 nm CMOS SOI technology targeting 3G PA SOC
297
0.35 V time-domain-based instrumentation amplifier
298
0.35% absolute efficiency gain of bifacial N-type Si solar cells by industrial Metal Wrap Through Technology
299
0.35-μm asymmetric and symmetric LDD device comparison using a reliability/speed/power methodology
300
0.35μm CMOS Technology with Chemical Mechanical Polishing for Three Metallization Levels Planarization
301
0.35μm SPDT RF CMOS switch for wireless communication application
302
0.35μm, 30V fully isolated and low-Ron nLDMOS for DC-DC applications
303
0.35µ, 1 GHz, CMOS Timing Generator Using Array of Digital Delay Lock Loops
304
0.35-&#181;m laser-matter interaction experiments at the University of Rochester
305
0.35mm pitch wafer level package board level reliability: Studying effect of ball de-population with varying ball size
306
0.35um SiGe BiCMOS front-end amplifier for 10Gb/s optical receiver
307
0.37 mS/μm In0.53Ga0.47As MOSFET with 5 nm channel and self-aligned epitaxial raised source/drain
308
0.374 Pflop/s trillion-particle kinetic modeling of laser plasma interaction on roadrunner
309
0.37mW/Gb/s low power SLVS transmitter for battery powered applications
310
0.39–0.45THz symmetric MOS-varactor frequency tripler in 65-nm CMOS
311
0.39-V, 18.26-µW/MHz SOTB CMOS Microcontroller with embedded atom switch ROM
312
0.4 µJ, sub-10-fs pulses from a MHz-NOPA
313
0.4 mW average power at 17.5μm from frequency mixing output of two-color fiber chirped pulse amplifier
314
0.4 mw wideband lna with double gm enhancement and feed-forward noise cancellation
315
0.4 V, 5.6 mW InP HEMT V-band Low-Noise Amplifier MMIC
316
0.4 W CW diffraction limited beam Al free 0.98 μm wavelength three core ARROW-type diode lasers
317
0.4 watt X-band quasimonolithic amplifier-design, results, comparative analysis of simulating methods
318
0.4% absolute efficiency gain of industrial solar cells by laser doped selective emitter
319
0.4-µm gate-length devices fabricated by contrast-enhanced lithography
320
0.4–3.0 GHz highly efficient harmonic-tuned power amplifier
321
0.4–6 GHz,17-dBm B1dB, 36-dBm IIP3 channel-selecting, low-noise amplifier for SAW-less 3G/4G FDD receivers
322
0.42 μm contacted pitch dual damascene copper interconnect for 0.15 μm EDRAM using tapered via aligned to trench
323
0.42-to-1.20V read assist circuit for SRAMs in CMOS 65nm
324
0.4-5.2GHz SiGe-MMIC Direct Conversion Mixer for Cognitive Radio Receiver
325
0.45-V operating Vt-variation tolerant 9T/18T dual-port SRAM
326
0.469 PDFSA protocol for RFID arbitration
327
0.4-8 GHz broadband MMICs in novel RF chip size package for optical video distribution system
328
0.4-nm channel spacing dense WDM multiplexer and demultiplexer using FBGs and bandpass filters
329
0.4-THz frequency offset locking between two optical frequency combs
330
0.4V CMOS based low power voltage controlled ring oscillator for medical applications
331
0.4-V logic library friendly SRAM array using rectangular-diffusion cell and delta-boosted-array-voltage scheme
332
0.4-V logic-library-friendly SRAM array using rectangular-diffusion cell and delta-boosted-array voltage scheme
333
0.4V low-power 60-GHz oscillator in 65nm CMOS
334
0.4V OTA design using DTMOS transistors for EEG data processing
335
0.4V SRAM with bit line swing suppression charge share hierarchical bit line scheme
336
0.4-W diffraction-limited beam and single-frequency operation from resonant antiguided phase-locked laser array with DFB grating
337
0.5 µm-channel CMOS technology optimized for liquid-nitrogen-temperature operation
338
0.5 μm CMOS Device Design and Characterization
339
0.5 μm CMOS Devices and Circuit Characterization
340
0.5 μm Device Processing with Excimer Laser-Based Lithography
341
0.5 µJ femtosecond pulses from a giant-chirp ytterbium fiber oscillator
342
0.5 µm GaAs PHEMT medium power amplifier design using simple RC feedback amplifier for wireless LAN applications
343
0.5 μm Device processing with excimer laser-based lithography
344
0.5 μm 1 M gate CMOS SOG
345
0.5 μm GaAs MESFET 4.2 mW ultra-low power decision circuit for optical communications with 0.1 μm CMOS and HBT implementation
346
0.5 μm line width molybdenum metallization for the first level interconnection
347
0.5 μm silicon bipolar transistor technology for analog applications
348
0.5 μm/60 GHz fmax implanted base Si bipolar technology
349
0.5 /spl mu/m AlGaAs/GaAs HMESFET technology for digital VLSI products
350
0.5 /spl mu/m CMOS circuits performing OFDM demodulation and channel estimation/correction for digital terrestrial TV applications
351
0.5 /spl mu/m-thick /spl mu/c-Si solar cell grown by photo-CVD on highly textured SnO/sub 2/
352
0.5 J frequency stabilized diode pumped solid state laser for a next generation lidar system
353
0.5 Micron BICMOS technology
354
0.5 micron CMOS for high performance at 3.3 V
355
0.5 Micron Gate CMOS Technology Using E-Beam/Optical Mix Lithography
356
0.5 micron low-power BiCMOS gate array for B-ISDN 622 Mb/s user-network interface
357
0.5 MJ superconducting pulse magnet for energy storage
358
0.5 mu m BiCMOS standard-cell macros including 0.5 W 3 ns register file and 0.6 W 5 ns 32 kB cache
359
0.5 mu m gate length InP/In0.75Ga0.25As/InP pseudomorphic HEMT with high DC and RF performance
360
0.5 MW 60 kHz solid state power modulator
361
0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications
362
0.5 Tbit/s WDM transmission experiment over 7760 km with 28 nm available optical pass-bandwidth
363
0.5 THz integrated antipodal curvilinearly tapered slot antenna with circular polarization
364
0.5 THz Performance of a Type-II DHBT With a Doping-Graded and Constant-Composition GaAsSb Base
365
0.5 to 18 GHz Distributed Amplifier Design and Associated Biasing Solutions
366
0.5 to 18 GHz Distributed Amplifier Design and Associated Biasing Solutions
367
0.5 V 1.3 GHz voltage controlled ring oscillator
368
0.5 V 320 MHz 8 b multiplexer/demultiplexer chips based on a gate array with regular-structured DTMOS/SOI
369
0.5 V asymmetric three-Tr. cell (ATC) DRAM using 90nm generic CMOS logic process
370
0.5 V CMOS logic delivering 200 million 8/spl times/8 bit multiplications/s at less than 100 fJ based on a 50 nm T-gate SOI technology
371
0.5 V inverter-based ultra-low-power, low-noise VGA for medical ultrasound probes
372
0.5 V multi-phase digital controlled oscillator with smooth phase transition circuit
373
0.5 V SOI CMOS pass-gate logic
374
0.5 V Start-Up 87% Efficiency 0.75 mm² On-Chip Feed-Forward Single-Inductor Dual-Output (SIDO) Boost DC-DC Converter for Battery and Solar Cell Operation Sensor Network Micro-Computer Integration
375
0.5 V Supply Voltage Operation of In0.65Ga0.35As/GaAs0.4Sb0.6 Tunnel FET
376
0.5 V switching current integrator
377
0.5 V ultra-low power wideband LNA with forward body bias technique
378
0.5 V, 3 6µW Gm-C Butterworth low pass filter in 0.18µm CMOS process
379
0.5 V, Low Power, 1 MHz Low Pass Filter in 0.18 µm CMOS Process
380
0.5 VDD digitally controlled oscillators design with compensation techniques for PVT variations
381
0.5 W 2-21 GHz monolithic GaAs distributed amplifier
382
0.5 W CW diffraction-limited-beam operation from high-efficiency resonant-optical-waveguide diode-laser arrays
383
0.5 W efficient continuous wave Tm:KY(WO/sub 4/)/sub 2/ laser
384
0.5 W High Linearity Power Amplifier for Broadband Wireless (3.3 ~ 3.9 GHz)
385
0.5 Watt, single-frequency, 1510-1630 nm, pump and signal-resonant optical parametric oscillator
386
0.5μ CMOS 2.4 GHz RF-switch for wireless communications
387
0.5μm CMOS Technology for 5.6nsec High Speed 16x16 Bit Multiplier
388
0.5μm CMOS technology for 5.6nsec high speed 16×16 bit multiplier
389
0.5–1.3 µm III-nitride lasers and light emitting diodes epitaxially grown on (001) silicon
390
0.5–50 GHz dielectric characterisation of breast cancer tissues
391
0.5–9 GHz CMOS variable gain amplifier with control linearization, low phase variations and self-matching
392
0.5-μm 2 M-transistor BiPNMOS channelless gate array
393
0.5-μm 3.3-V BiCMOS standard cells with 32-kilobyte cache and ten-port register file
394
0.5-μm bipolar technology using a new base formation method: SST1C
395
0.5-μm CMOS circuits for demodulation and decoding of an OFDM-based digital TV signal conforming to the European DVB-T standard
396
0.5-μm CMOS orthogonal encoding readout cell for active imaging systems
397
0.5-μm gate length self-aligned gate MODFET with reduced short-channel effects
398
0.5/spl mu/m 2M-transistor BipnMOS Channelless Gate Array
399
0.5-/spl mu/m-pitch copper-dual-damascene metallization using organic SOG (k=2.9) for 0.18-/spl mu/m CMOS applications
400
0.5- \\mu\\hbox {m} CMOS Implementation of Analog Heart-Rate Extraction With a Robust Peak Detector
401
0.5-1 V 2 GHz RF front-end circuits in CMOS/SIMOX
402
0.5-2.5 GHz, 10W MMIC Power Amplifier in GaN HEMT Technology
403
0.5-2.6 GHz Si--Monolithic Wideband Amplifier IC
404
0.5-2.6GHz Si-Monolithic Wideband Amplifier IC
405
0.5-23 GHz MMIC amplifier modules
406
0.5-25 GHz inductorless single-ended resistive mixer in 0.13 μm CMOS
407
0.525μm2 6T-SRAM bit cell using 45nm fully-depleted SOI CMOS technology with metal gate, high k dielectric and elevated source/drain on 300mm wafers
408
0.53 bit/s/Hz spectral efficiency free-space demultiplexer with very low crosstalk, loss and polarisation dependence
409
0.55 eV n/p/n MIM TPV cell development
410
0.5-6 ghz low-voltage low-power mixer using a modified cascode topology in 0.18 μm cmos technology
411
0.56 V, –20 dBm RF-Powered, Multi-Node Wireless Body Area Network System-on-a-Chip With Harvesting-Efficiency Tracking Loop
412
0.5A fast CMOS LDO
413
0.5-femtosecond-resolution measurement of optical resonant tunneling time
414
0.5Gbit/s signal transmission in thin-film waveguide with free-space-wave add-drop multiplexers
415
0.5MJ 18KV module of capacitive energy storage
416
0.5mJ Pulses from a Single Transverse-Mode Q-Switched Erbium Fibre Laser
417
0.5-PW 45-fs OPCPA laser system
418
0.5SrTiO3-0.5PbTiO3 thin films by rf-sputtering on Pt/TiNx, RuO/TiNx and TiNx electrodes
419
0.5-Tb/s eye-diagram measurement by optical sampling using XPM-induced wavelength shifting in highly nonlinear fiber
420
0.5THz Smith-Purcell device using sheet electron beam
421
0.5V 160-MHz 260uW all digital phase-locked loop
422
0.5-V 350-ps 28-nm FD-SOI SRAM array with dynamic power-supply 5T cell
423
0.5-V 5.6-GHz CMOS Receiver Subsystem
424
0.5-V analog circuit techniques and their application in OTA and filter design
425
0.5V Bit-Line-Voltage Self-Boost-Programming in Ferroelectric-NAND Flash Memory
426
0.5-V bulk-driven CMOS operational amplifier
427
0.5-V bulk-driven fully differential current conveyor
428
0.5-V bulk-driven second-generation current conveyor
429
0.5V FinFET SRAM with dynamic threshold control of pass gates for salvaging malfunctioned bits
430
0.5-V high-speed circuit designs for nanoscale SoCs
431
0.5-V high-speed circuit designs for nanoscale SoCs — Challenges and solutions
432
0.5V image processor with 563 GOPS/W SIMD and 32bit CPU using high voltage clock distribution (HVCD) and adaptive frequency scaling (AFS) with 40nm CMOS
433
0.5V image processor with 563 GOPS/W SIMD and 32bit CPU using high voltage clock distribution (HVCD) and adaptive frequency scaling (AFS) with 40nm CMOS
434
0.5-V input digital LDO with 98.7% current efficiency and 2.7-µA quiescent current in 65nm CMOS
435
0.5-V Low- V _{\\rm T} CMOS Preamplifier for Low-Power and High-Speed Gigabit-DRAM Arrays
436
0.5V operation and performance of nonvolatile SRAM cell based on pseudo-spin-FinFET architecture
437
0.5-V operation variation-aware word-enhancing cache architecture using 7T/14T hybrid SRAM
438
0.5-V operational transconductance amplifier for CMOS bandgap reference application
439
0.5-V sub-ns open-BL SRAM array with mid-point-sensing multi-power 5T cell
440
0.5V wavelet filters using current mirrors
441
0.5-V, 150-MHz, bulk-CMOS SRAM with suspended bit-line read scheme
442
0.5V, 225nW, 100 Hz Low pass filter in 0.18µm CMOS process
443
0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser
444
0.5W single-longitudinal mode, monolithic Nd:YVO4 microchip laser
445
0.5W X-band SiGe PA with integrated double-tuned transformers
446
0.6 μm-band AlGalnP Visible Laser Diodes
447
0.6 – 3.6 GHz wideband operation with high phase resolution On-Chip Network Analyzer
448
0.6 &amp;mu;m, single poly advanced BiCMOS (ABiC IV) technology for ASIC applications
449
0.6 μm BiCMOS based 15 and 25 V LDMOS for analog applications
450
0.6 μm BiCMOS technology for RF and high speed converter applications
451
0.6 μm CMOS technology with radiation tolerant features application to 8 K×16 dual port RAM and sea of gates
452
0.6 μm CMOS, 622/155 Mbit/s ATM-SDH/SONET framer IC
453
0.6 /spl mu/m Pitlch Highly Reliable Multilevel Interconnection Using Hydrogen Silicate Based Inorganic SOG For Sub-quarter Micron CMOS Technology
454
0.6 mu m EPROM cell design based on a new scaling scenario
455
0.6 mu m high speed BiCMOS technology with emitter-base self-aligned structure
456
0.6 Tbit/s/km multimode fibre feasibility experiment using 40 channel DWDM over quadrature-subcarrier transmission
457
0.6 V D flip-flop utilising negative differential resistance device
458
0.6 V operation, 26% smaller voltage ripple, 9% energy efficient boost converter with adaptively optimized comparator bias-current for ReRAM program in low power IoT embedded applications
459
0.6 V suppy voltage 0.25 /spl mu/m E/D-HJFET(IS/sup 3/T) LSI technology for low power consumption and high speed LSIs
460
0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm
461
0.6–2.0 V, All-CMOS temperature sensor front-end using bulk-driven technology
462
0.6–2.7-Gb/s Referenceless Parallel CDR With a Stochastic Dispersion-Tolerant Frequency Acquisition Technique
463
0.6–3-GHz Wideband Receiver RF Front-End With a Feedforward Noise and Distortion Cancellation Resistive-Feedback LNA
464
0.6-&amp;mu;m 12 K-gate ECL gate array with RAM and ROM
465
0.6/spl mu/m CMOS pH sensor IC with Si/sub 3/N/sub 4/ island structure
466
0.60 μm pitch metal integration in 0.25 μm technology
467
0.61W/mm2 resonant inductively coupled power transfer for 3D-ICs
468
0.622-8.0 Gbps 150 mW serial IO macrocell with fully flexible preemphasis and equalization
469
0.65 V device design with high-performance and high-density 100 nm CMOS technology for low operation power application
470
0.65–0.73THz quintupler with an on-chip antenna in 65-nm CMOS
471
0.65V sigma-delta modulators
472
0.66 ¿m room-temperature operation of InGaAlP DH laser diodes grown by MBE
473
0.67 μm light propagation characteristics of MSF waveguide at 1 μm rule
474
0.69 nm resolution ultrasonic motor for large stroke precision stage
475
0.6-eV bandgap In/sub 0.69/Ga/sub 0.31/As thermophotovoltaic devices grown on InAs/sub y/P/sub 1-y/ step-graded buffers by molecular beam epitaxy
476
0.6mW 6.3 GHz 40nm CMOS divide-by-2/3 prescaler using heterodyne phase-locking technique
477
0.6Tbit/s Capacity and 2bit/s/Hz Spectral Efficiency at 42.6Gsymbol/s Using a Single DFB Laser with NRZ Coherent WDM and Polarisation Multiplexing
478
0.6V correlators for WLAN receivers
479
0.6-V supply voltage references for CMOS technology based on threshold-voltage-difference architecture
480
0.6V voltage doubler and clocked comparator for correlation-based impulse radio UWB receiver in 65nm CMOS
481
0.6V, 5dB NF, −9.8dBm IIP3, 900MHz receiver with interference cancellation
482
0.6W single-frequency Nd:YVO4/BiB3O6 laser at 671nm
483
0.7 micron gate length complementary Al/sub 0.75/Ga/sub 0.25/As/In/sub 0.25/Ga/sub 0.75/As/GaAs HIGFET technology for high speed/low power digital circuits
484
0.7 MW output power from coherently combined Q-switched photonic crystal fiber laser
485
0.7 pA/V transconductor allowing Gm-C filters in range of mHz using sub-pF capacitors
486
0.7 Tbit/s (66×10.66 Gbit/s) WDM transmission over 2212 km using broadband, high-power EDFAs with pump reflector
487
0.7 V Manchester carry look-ahead circuit using PD SOI CMOS asymmetrical dynamic threshold pass transistor techniques suitable for low-voltage CMOS VLSI systems
488
0.7 V Monolithic CMOS LNA for 802.11 A/B WLAN Application
489
0.7 V SRAM Technology with Stress-Enhanced Dopant Segregated Schottky (DSS) Source/Drain Transistors for 32 nm Node
490
0.7 V supply self-biased nanoWatt MOS-only threshold voltage monitor
491
0.7 V supply, 8 nW, 8 ppm/°C resistorless sub-bandgap voltage reference
492
0.7 W X-Ku-band high-gain, high-efficiency common base power HBT
493
0.7 W CW output power from a green semiconductor disk laser
494
0.7 W in singlemode fibre from 1.48 μm semiconductor unstable-cavity laser with low-confinement asymmetric epilayer structure
495
0.7 W single-drift GaAs IMPATT diodes for millimetre-wave frequencies
496
0.7μm CMOS digitally controlled switched capacitor oscillator for a resonance tracking ultrasound transmitter
497
0.7–1.0-GHz Reconfigurable Bandpass-to-Bandstop Filter With Selectable 2- and 4-Pole Responses
498
0.7–1.8 GHz digital polar transmitter using a watt-class CMOS power amplifier and digital pulse width modulation with spurious signal reduction
499
0.7–20-GHz Dual-Polarized Bilateral Tapered Slot Antenna for EMC Measurements
500
0.7–2.7-GHz 12-W Power-Amplifier MMIC Developed Using MLP Technology
501
0.7-2.7 GHz wideband CMOS low-noise amplifier for LTE application
502
0.73–1.03-GHz Tunable Bandpass Filter With a Reconfigurable 2/3/4-Pole Response
503
0.73-W extremely low-power-consumption optical amplifier repeater for 10G-EPON systems
504
0.74/0.55-eV GaxIn1-xAs/InAsP1-y monolithic, tandem, MIM TPV converters: design, growth, processing and performance
505
0.75 MA, 400 ns rise time LTD stage
506
0.75 V micro-power SI memory cell with feedthrough error reduction
507
0.75 V micro-power SI memory cell with feedthrough error reduction
508
0.75 Watt and 5 Watt drivers in standard 65nm CMOS technology for high power RF applications
509
0.75-V four-quadrant current multiplier using floating gate-MOS transistors
510
0.75-V subthreshold CMOS logic using dynamic substrate bias
511
0.77 fJ/bit/search Content Addressable Memory Using Small Match Line Swing and Automated Background Checking Scheme for Variation Tolerance
512
0.78- and 0.98-μm ridge-waveguide lasers buried with AlGaAs confinement layer selectively grown by chloride-assisted MOCVD
513
0.78-0.90-μm wavelength-tunable femtosecond soliton pulse generation using photonic crystal fiber
514
0.78-0.98 μm ridge-waveguide-lasers buried with AlGaAs confinement layer selectively grown by chloride-assisted MOCVD
515
0.79" single panel liquid crystal on silicon backplane IC with 1408 8 b DACs for HDTV applications
516
0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell
517
0.7-V bulk-driven three-stage class-AB OTA
518
0.8 µm Bi-CMOS technology with high fTion-implanted emitter bipolar transistor
519
0.8 μm CMOS analog front-end processor for 4x speed CD-ROM
520
0.8 μm Range Optical Isolator Using LPE Garnet Film
521
0.8 &amp;mu;m 1.4 MTr. CMOS SOG based on column macro-cell
522
0.8 μm BiCMOS process with high resistivity substrate for L-band Si-MMIC applications
523
0.8 μm CMOS analog front-end processor for 4× speed CD-ROM
524
0.8 μm CMOS implementation of weighted-order statistic image filter based on cellular neural network architecture
525
0.8 μm HSOI4CB rad-tolerant technology for space applications: a solution to harden existing components with minimum design risk
526
0.8 bit/s/Hz spectral efficiency at 10 Gbit/s via vestigial-sideband filtering
527
0.8 Bit/s/Hz spectral efficiency at 10Gb/s via vestigial-sideband filtering
528
0.8 GHz to 2.4 GHz Tunable Ceramic Microwave Bandpass Filters
529
0.8 micron double level metal technology with SOG filled tungsten plug
530
0.8 mW 1.1–5.6 GHz dual-modulus prescaler based on multi-phase quasi-differential locking divider
531
0.8 to 18.0 GHz Hybrid Distributed Amplifiers using 0.25 Ã\x97 200 pm MESFET and HEMT
532
0.8 V CMOS adiabatic differential switch logic circuit using bootstrap technique for low-voltage low-power VLSI
533
0.8 V CMOS content-addressable-memory (CAM) cell circuit with a fast tag-compare capability using bulk PMOS dynamic-threshold (BP-DTMOS) technique based on standard CMOS technology for low-voltage VLSI systems
534
0.8 V GPS band CMOS VCO with 29% Tuning Range
535
0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm
536
0.8-µW CMOS bulk-driven linear operational transconductance amplifier in 0.35-µm technology
537
0.8–4 GHz high efficiency power amplifier in GaN technology
538
0.8/2.2-GHz Programmable Active Bandpass Filters in InP/Si BiCMOS Technology
539
0.81 ¿m band AlGaAs/GaAs double-channel planar buried-heterostructure laser with large optical cavity
540
0.8-2.5 GHz SiC Power Amplifiers
541
0.83- and 1.3-micron microwave (2-18 GHz) fiber-optic links using directly modulated laser sources
542
0.84 ps Resolution Clock Skew Measurement via Subsampling
543
0.84 terahertz self modulation in a dual transverse mode 980 nm laser
544
0.85 μm bottom-emitting vertical-cavity surface-emitting laser diode arrays grown on AlGaAs substrates
545
0.85 PW, 33 fs laser pulse generation from a Ti:sapphire laser system
546
0.85-μm vertical-cavity surface-emitting laser diode arrays grown on p-type GaAs substrate
547
0.8-5.2 GHz band SiGe MMIC quadrature mixer for SDR direct conversion receivers
548
0.8-5.2 GHz band SiGe-MMIC Q-MIX for a multi-band multi-mode direct conversion receiver
549
0.8-5.2GHz band SiGe-MMIC Q-MOD for multi-band multi-mode direct conversion transmitters
550
0.850 THz vacuum electronic power amplifier
551
0.86-nm CET Gate Stacks With Epitaxial \\hbox {Gd}_{2}\\hbox {O}_{3} High- k Dielectrics and FUSI NiSi Metal Electrodes
552
0.87 Tbit/s 160 Gbaud dual-polarization D8PSK OTDM transmission over 110 km
553
0.88-THz Optical Clock Distribution on Adhesively Bonded Silicon Nanomembrane
554
0.8bit/s/Hz of Information Spectral Density by Vestigial Sideband Filtering of 42.66 Gb/s NRZ
555
0.8nm EOT and High Hole Mobility of Ge P-MISFETs Using HfAlO/GeOx/Ge Gate Stacks Formed by Plasma Oxidation and Atomic Layer Deposition
556
0.8V 1GHz dynamic comparator in digital 90nm CMOS technology
557
0.8V bulk-driven variable gain amplifier
558
0.8-V floating-gate differential difference current feedback operational amplifier
559
0.8-V rail-to-rail operational amplifier with near-Vt gain-boosting stage fabricated in FinFET technology for IoT sensor nodes
560
0.8V start-up 92% efficiency on-chip boost DC-DC converters for battery operation micro-computers
561
0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode \\hbox {In}_{0.75}\\hbox {Ga}_{0.25}\\hbox {As} MOSFET
562
0.8-Volt bulk-driven flipped voltage follower
563
0.9 /spl sim/ 2.7 /spl mu/m over one octave spanning ultrabroad supercontinuum generation based on all fiber system
564
0.9 eV Potential Barrier Schottky Diode on 0.75-0.5 eV Gap Gax In1-x ASa-Si:HPt
565
0.9 Mbit Triple Port Field Memory
566
0.9 V 58 μW 92 dB SNDR audio ΔΣ modulator with high efficiency low noise switched-opamp and novel DWA technique
567
0.9 V current-mode sense amplifier using concurrent bit- and data-line tracking and sensing techniques
568
0.9 V DSP blocks: a 15 ns 4 K SRAM and a 45 ns 16-bit multiply/accumulator
569
0.9 V low-power switched-opamp switched-capacitor bandpass filter for electroneurography acquisition systems
570
0.9 V rail-to-rail constant gm CMOS amplifier input stage
571
0.9 V to 5 V Bidirectional Mixed-Voltage I/O Buffer With an ESD Protection Output Stage
572
0.9 V, 5 nW, 9 ppm/oC resistorless sub-bandgap voltage reference in 0.18μm CMOS
573
0.9 W/mm, 76% P.A.E. (7 GHz) GaInAs/InP composite channel HEMTs
574
0.9µm pitch pixel CMOS image sensor design methodology
575
0.9–10GHz low noise amplifier with capacitive cross coupling
576
0.9-10.6 GHz UWB mixer using current bleeding for multi-band application
577
0.92 Pb(Mg1/3Nb2/3)O3 — 0.08 PbTiO3 relaxor ferroelectrics modified with different dopants for electrocaloric cooling application
578
0.94ps-rms-jitter 0.016mm2 2.5GHz multi-phase generator PLL with 360° digitally programmable phase shift for 10Gb/s serial links
579
0.98 μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer
580
0.98 μm InGaAs-InGaAsP-InGaP GRIN-SCH SL-SQW lasers for coupling high optical power into single-mode fiber
581
0.98 μm multiquantum well tunnelling injection lasers with ultra-high modulation bandwidths
582
0.98 μm wavelength InGaAs/GaAs/AlGaAs strained quantum-well laser diodes with high reliability
583
0.98 /spl mu/m multiple quantum well tunneling injection lasers extrapolated
584
0.98- mu m strained quantum well lasers for coupling high optical power into single-mode fiber
585
0.98 mu m strained-layer GaInAs/GaInAsP/GaInP quantum well lasers
586
0.98-μm InGaAs-InGaP strained quantum-well lasers with GaAs-InGaP superlattice optical confinement layer
587
0.98-μm multiple-quantum-well tunneling injection laser with 98-GHz intrinsic modulation bandwidth
588
0.98-1.02 μm strained InGaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguides
589
0.99 mW 3-10 GHz common-gate CMOS UWB LNA using T-match input network and self-body-bias technique
590
0.9mW 7GHz and 1.6mW 60GHz frequency dividers with locking-range enhancement in 0.13µm CMOS
591
0.9V 12mW 2MSPS algorithmic ADC with 81dB SFDR
592
0.9-V DSP blocks: a 15-ns 4-k SRAM and a 45-ns 16-b multiply/accumulator
593
0.9-V Rail-to-Rail Operational Amplifiers with Adaptive Threshold Voltage Control
594
0.9-V sense-amplifier-based reduced-clock-swing MTCMOS flip-flops
595
0.9Watt 580nm Solid-State Laser Source
596
0/1 Knapsack on Hardware: A Complete Solution
597
0/1 space hopping technique using backward training method with pre-compensation
598
0/1 space hopping transceiver technology for transmission security based on reverse training
599
0?3 GHz spectrum occupancy measurement in Bangladesh for cognitive radio purpose
600
00 expected to attend southern district meeting in miami beach
601
00 Metrics
602
00 project management: The need for process
603
001: a rapid development approach for rapid prototyping based on a system that supports its own life cycle
604
007 Lotus Esprit ´submarine car´ [Classic Projects]
605
0-1 constraints satisfaction through recursive neural networks with mixed penalties
606
0-1 GHz waveguide 10.6 μm GaAs electrooptic modulator
607
0-1 laws and decision problems for fragments of second-order logic
608
0-1 laws for infinitary logics
609
0-1 Mixed Integer Programming for a Newly Merged Metropolis to Develop MSW Management Systems
610
0-1 Programming Model-Based Method for Planning Code Review Using Bug Fix History
611
01005 SMT component assembly for wireless SIP modules
612
0-1695A/U - Retrofit or Replace?
613
0-2.5 GHz Generator Based on ADF4360 Controlled by Microprocessor
614
0-3 Pieoelectric Ceramic-Polymer Composites Prepared by a New Method: Fired Composites
615
0-3 piezoceramic-polymer composites prepared using thermoplastics and elastomers
616
04_Welcome from the Technical Programme Chair - VTC Spring 2007
617
0-40 GHz GaAs MESFET 1:2 distributed signal distributor IC
618
0-40 GHz GaAs MESFET distributed baseband amplifier ICs for high-speed optical transmission
619
0-56 GHz GaAs MESFET gate-line-division distributed baseband amplifier IC with 3D transmission lines
620
0-60 GHz in four years: 60 GHz RF in digital CMOS
621
071/081-where next? [telephone numbering]
622
0-80GHz 0.15 μm GaAs PHEMT Distributed Amplifier for Optic-Fiber Transmission Systems
623
0-90 GHz InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC
624
097.pdf
625
0°-phase-shift, single-lobe operation from wide-waveguide interferometric (WWI) phase-locked arrays of InGaAsP/InP (λ = 1.3 μm) diode lasers
626
0D modelling and efficiency analysis of three power amplification schemes for inductive storage generators in the μs scale
627
0D numerical modelisation and optimization of flux compression experiments
628
0-Day Vulnerabilities and Cybercrime
629
0-dB insertion loss miniaturized third-order 2.54GHz CMOS active bandpass filter
630
0-dB wavelength conversion using direct-bonded QPM-Zn : LiNbO3 ridge waveguide
631
0ew Paradigm for Parallel I/O to Resilient Network Storage
632
0-Flat canonical form control scheme for Rabbit´s dynamic walking control
633
0n convergence of the mean shift algorithm
634
0n the numerators and zeros and rational transfer matrices
635
0n the Use of Resonant Diaphragms as FM Pressure Transducers
636
0ptimal location and parameter setting of TCSC based on Sensitivity analysis
637
0RC2DSP: compiler infrastructure supports for VLIW DSP processors
638
0-SM: A fast algorithm for mining Candidate Clusters in Pattern-based Clustering
639
0-Step K-means for clustering Wikipedia search results
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