ليست عنوان مقالات لاتين فني مهندسي 1 1.3-<formula formulatype="inline"> <img src="/images/tex/241.gif" alt="\\mu"> </formula>m Laterally Tapered Ridge Waveguide DFB Lasers With Second-Order Cr Surface Gratings

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1 - 8-GHz GaN-based power amplifier using flip-chip bonding

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1 µm 256K RAM process technology using molybdenum-polysilicon gate

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1 µm MOSFET VLSI technology: Part I—An overview

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1 µm MOSFET VLSI technology: Part II—Device designs and characteristics for high-performance logic applications

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1 µm MOSFET VLSI technology: Part III—Logic circuit design methodology and applications

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1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraints

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1 µm MOSFET VLSI technology: Part V—A single-level polysilicon technology using electron-beam lithography

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1 µm MOSFET VLSI technology: Part VI—Electron-beam lithography

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1 µm MOSFET VLSI technology: Part VII—Metal silicide interconnection technology—A future perspective

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1 µm MOSFET VLSI technology: Part VIII—Radiation effects

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1 × 4 self-routing of 40-Gb/s 16-bit optical packets using self-serial-to-parallel conversion-based label recognition

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1 μm gate length, In_{0.75_{Ga0.25_{As channel, thin body n-MOSFET on InP substrate with transconductance of 737 μm}}}

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1 μm Mo Gate MOS Technology

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1 µJ from a high repetition rate femtosecond optical parametric chirped-pulse amplifier in the mid-infrared

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1 × N Fiber Optic Coupler Based on a Polyhedral Gradient-Index Lens

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1 × 2 Vertically optical splitter with 10-Gbps transmission rate for chip-level optical interconnects

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1 × 4 antenna array for chip-to-chip communication at 180GHz

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1 × 4 Channel Si-Nanowire Microring-Assisted Multiple Delayline-Based Optical MUX/DeMUX

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1 × 4 Optical switch based on a four discrete position digital actuator

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1 × 8 signal router using cascading the Mach-Zehnder interferometers

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1 × 2 wideband patch-dipole antenna array with slot coupler

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1 & 1 [advertisement]

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1 & 1 [advertisement]

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1 μm CMOS programmable surface acoustic wave filter integrated circuit

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1 μm-scale oxide/semiconductor photonic lattice fabrication by wet oxidation methods

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1 × 2 MOEMS switch based on silicon-on-insulator and polymeric waveguides

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1 * N Trust Establishment within Dynamic Collaborative Clouds

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1 /spl mu/m MOSFET VLSI technology. I. An overview

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1 /spl mu/m MOSFET VLSI technology. II. Device designs and characteristics for high-performance logic applications

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1 /spl mu/m MOSFET VLSI technology. III. Logic circuit design methodology and applications

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1 /spl mu/m MOSFET VLSI technology. IV. Hot-electron design constraints

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1 /spl mu/m MOSFET VLSI technology. V. A single-level polysilicon technology using electron-beam lithography

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1 /spl mu/m MOSFET VLSI technology. VI. Electron-beam lithography

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1 /spl mu/m MOSFET VLSI technology. VII. Metal silicide interconnection technology - A future perspective

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1 /spl mu/m MOSFET VLSI technology. VIII. Radiation effects

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1 /spl times/ 12 VCSEL array with optical monitoring via flip-chip bonding

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1 [GHz] high frequency Colpitts oscillator

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1 $\\mu$ m-Thickness Ultra-Flexible and High Electrode-Density Surface Electromyogram Measurement Sheet With 2 V Organic Transistors for Prosthetic Hand Control

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1 $\\times$ 2 Wavelength Multiplexer With High Transmittances Using Extraneous Self-Imaging Phenomenon

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1 A and 120 mA Thin-Film Multijunction Thermal Converters

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1 Ã\x97 2 and 1 Ã\x97 3 Multimode Interference Couplers Fabricated by Hot Embossing and DUV-induced Modification of Polymers

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1 Ã\x97 n optical fibre switch

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1 Adaptive Systems in Floating-Gate CMOS Technology

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1 and 10 Gigabit Ethernet Readout Interfaces for DETNI

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1 and 2 stage decision feedback coherent detectors for DQPSK in fading channels

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1 and 2 watt MMIC power amplifiers for commercial K/Ka-band applications

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1- And 2-D Numerical Simulations Of Spherical Pinches

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1 and 5 day differential InSAR under crossing orbits with TerraSAR-X

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1 and infinite norm support vector machine

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1 b/s/Hz coherent WDM transmission over 112 km of dispersion managed optical fibre

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1 BIO1 Bioengineering and Medical Electronics

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1 byte continuously tunable delay in coupled-resonator optical delay lines

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1 Canadian forces flying training school (1 CFFTS) resource allocation simulation tool

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1 cell boost-up converter with ultra low stand-by current

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1 chip integrated software calibrated CMOS pressure sensor with MCU, A/D convertor, D/A convertor, digital communication port, signal conditioning circuit and temperature sensor

57

1 chip low power MPEG1 codec with compact motion estimation

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1 cm thick HgI₂ gamma-ray spectrometers

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1 cm×1 cm GaAs/AlGaAs MQW solar cells under one sun and concentrated sunlight

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1 cm² and 3 cm² Multi-Linear Silicon Drift Detectors for 2D X-ray spectroscopic imaging and Compton scattering

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1 D- And 2D-electro-optic Field Mapping To Study Nonlinear Effects In NLTLs

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1 dimensional atmospheric Particle-In-Cell plasma simulation on the GPU

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1 DOF haptic device built with parts of recycled material

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1 DOF haptic device for online experimentation

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1 DOF swimming robot inspired by bacterial motion mechanism

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1 Exabit/s·km transmission with multi-core fiber and spectral efficient modulation format

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1 GB at 1 MBPS: Cost of information society

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1 Gb stacked solution of multilevel NOR flash memory packaged in a LFBGA 8 mm by 10 mm by 1.4 mm of thickness

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1 Gb/s clock recovery PLL in 0.5 μm CMOS

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1 Gb/s Current-mode Bidirectional I/0 Buffer

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1 Gb/s operation and bit error rate studies of diode-clamped FET-SEED smart pixel receivers

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1 Gb/s operation and bit-error rate studies of FET-SEED diode-clamped smart-pixel optical receivers

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1 Gb/s single beam smart-pixel receiver/transmitter realized in hybrid MQW-CMOS OE-VLSI technology

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1 Gb/s system performance of an integrated, polarization-independent, acoustically-tunable optical filter

76

1 Gb/s VCSEL/CMOS flip-chip 2-D-array interconnects and associated diffractive optics

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1 Gb/s wireless link at 200 GHz using heterodyne detection

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1 Gbit/s automatic-power-control-free zero-bias modulation of very-low threshold MQW laser diodes

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1 Gbit/s bias-free operation of 1.3 μm strained MQW-LDs in -40 to +85°C temperature range

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1 Gbit/s Bidirectional Data Transmission over 100 m Graded-Index Glass Optical Fiber with Monolithically Integrated Transceiver Chips

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1 Gbit/s bidirectional full-wire rate communication LSI for residential gateways

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1 Gbit/s bipolar optical FSK transmission experiment over 121 km of fibre

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1 Gbit/s CMOS optical receiver with integrated detector operating at 850 nm

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1 Gbit/s CMOS photoreceiver with integrated detector operating at 850 nm

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1 Gbit/s coherent optical communication system using a 1 W optical power amplifier

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1 Gbit/s fibre channel CMOS transimpedance amplifier

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1 Gbit/s high-speed bit-synchronisation LSI for B-ISDN

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1 Gbit/s injection-locked DPSK communication experiments for space applications

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1 Gbit/s integrate-and-dump filter for digital communication systems

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1 Gbit/s MIMO-OFDM transmission experiments

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1 Gbit/s optical free space link operating over 40 m system and applications

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1 Gbit/s optical FSK heterodyne transmission experiment over 100 km of single-mode fibre

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1 Gbit/s PSK homodyne transmission system using phase-locked semiconductor lasers

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1 Gbit/s radio over fiber downlink at a 32 GHz carrier

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1 Gbit/s RZ zero-bias modulation of extremely low-threshold GaInAsP/InP DFB PPIBH laser

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1 Gbit/s serial data link using multi level signaling for fast readout front end or 3D-IC applications

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1 Gbit/s transmission experiment over 101 km of single-mode fibre using a 1.55 Â¿m ridge guide C3 laser

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1 Gbit/s visible light communication link based on phosphorescent white LED

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1 Gbit/s zero-bias operation of 1.3 μm InGaAsP n-type modulation-doped strained multiquantum well lasers

100

1 Gbit/s zero-IF DPSK coherent optical system using a single photodetector

101

1 Gbit/s, 32*32 high-speed space-division switching module for broadband ISDN using SST LSIs

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1 Gbps directed optical decoder based on microring resonators

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1 Gbyte/s error-free optical interconnection using a forward error-correcting code

104

1 Gc transistor amplifier stage using Linvill technique

105

1 GeV electron beams from a laser-driven channel-guided accelerator

106

1 GHz 100 W Internally Matched Static Induction Transistor

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1 GHz 5 mA 128/129 GaAs prescaler IC

108

1 GHz 50 mu W 1/2 frequency divider fabricated on ultra-thin SIMOX substrate

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1 GHz 64-bit high-speed comparator using ANT dynamic logic with two-phase clocking

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1 GHz and counting

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1 GHz automatic 2-Port Vector Network Analyzer using common laboratory instruments

112

1 GHz bulk acoustic wave slanted finger interdigital transducers in aluminum nitride for wideband applications

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1 GHz CCD transient detector

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1 GHz Class E RF Power Amplifier For A Polar Transmitter

115

1 GHZ CMOS 1/8 static frequency divider operating at 1 V

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1 GHz CMOS 12:1 time division MUX/DEMUX pair

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1 GHz CMOS down-conversion mixer

118

1 GHz differential phase acoustic lens design for surface and subsurface applications

119

1 GHz femtosecond erbium-doped fiber lasers

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1 GHz fully pipelined 3.7 ns address access time 8 k/spl times/1024 embedded DRAM macro

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1 GHz GaAs ADC building blocks

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1 GHz GaAs ADC building blocks

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1 GHz GaAs buck converter for high power amplifier modulation applications

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1 GHz GaInAs:Fe photoconductive optical AND gate with approximately 100 fJ switching energy for time-division access fibre networks

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1 GHz HAL SPARC64^R Dual Floating Point Unit with RAS features

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1 GHz instantaneous bandwidth digital pre-distortion for multi-concurrent channel wideband power amplifiers

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1 GHz integrated poly-Si and -SiGe photoconductors with BiCMOS compatibility

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1 GHz leading zero anticipator using independent sign-bit determination logic

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1 GHz logic circuits with sense amplifiers

131

1 GHz low loss coupled resonator filter using surface skimming bulk waves and Bleustein-Gulyaev waves

132

1 GHz low-thermal microwaves effect on mitotic division of vegetal tissues

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1 GHz meter from Racal

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1 GHz microprocessor integration with high performance transistor and low RC delay

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1 GHz opamp-based bandpass filter

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1 GHZ phononic band gap structure in air/aluminum nitride for symmetric lamb waves

137

1 GHz programmable analog phase shifter for adaptive antennas

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1 GHz repetition rate ring cavity femtosecond Yb:fiber laser

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1 GHz STW based oscillator with continuous temperature compensation

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1 GHz STW based oscillator with continuous temperature compensation

141

1 GHz Surface-Acoustic-Wave Plate Convolvers

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1 GHz tunable resonator on bulk single crystal SrTiO₃ plated with YBa₂Cu₃O_7-x films

143

1 Ghz ultra low power consumption analog to digital converter for multipixel Iidar systems

144

1 GHz voltage controlled oscillator using a SSBW/BGW combined mode resonator filter

145

1 GHz, 16 mW, 2 Bit Analogue to Digital GaAs Converter

146

1 GHz-drive magnetic thin-film inductors for RF integrated circuits using micro-patterned granular film

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1 Giga bit SOI DRAM with fully bulk compatible process and body-contacted SOI MOSFET structure

148

1 GS/s, low power flash analog to digital converter in 90nm CMOS technology

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1 GSps 11-bit track-and-hold in SiGe BiCMOS

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1 Gsymbol/s, 64 QAM coherent optical transmission over 150 km with a spectral efficiency of 3 bit/s/Hz

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1 Hop or 2 hops: Topology analysis in Body Area Network

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1 Hz operation of a gain-saturated 10.9 nm table-top laser

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1 Joule, 100 Hz repetition rate, picosecond CPA laser for driving high average power soft x-ray lasers

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1 K×128 high-performance, low power configurable CMOS SRAM compiler

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1 K-bit nonvolatile semiconductor read/write RAM

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1 kHz 2D Visual Motion Sensor Using 20 $,\\times,$ 20 Silicon Retina Optical Sensor and DSP Microcontroller

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1 kHz high repetition rate, compact ArF excimer laser and its applications

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1 kHz low power sound stimulates ATDC5 chondrocytes

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1 kHz measurement by using intelligent vision system - stereovision experiment on column parallel vision system: CPV4 -

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1 kHz rep-rate operation of a spark-gap switched gyromagnetic nonlinear transmission line array

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1 kHz terahertz imaging

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1 kHz, 25 kV output, sub-150 ps risetime gas spark gap and antenna

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1 kHz÷16 GHz Wavemeter

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1 Kilowatt, J-band broadband amplifier

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1 Km hole-assisted few-mode multi-core fiber 32QAM WDM transmission

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1 kW 360 GHz gyroklystron

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1 KW compact L-band pulsed power amplifier for Radar applications

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1 KW Dual Interleaved Boost Converter for Low Voltage Applications

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1 KW Ka-band folded waveguide Traveling-Wave Tube

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1 kW microstripline TRAPATT oscillator

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1 kW peak power 808 nm 2-D laser diode array

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1 kW PFC converter with compound active-clamping

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1 kW PFC converter with minimum-voltage active-clamping

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1 kW portable fuel cell system based on PEFCs

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1 KW power amplifier for 30…180 MHz bandwidth

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1 kW Pulsed Fibre Laser For Time Division Multiplexed Sensor Systems

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1 kW, 9 kV DC/DC converter module with time-sharing control of output voltage and input current

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1 kW, 9 kV DC-DC converter module with time-sharing control of output voltage and input current

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1 kW, CW TWT with 25% bandwidth at X-band

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1 kW/250 kHz full bridge zero voltage switched phase shift DC-DC converter with improved efficiency

181

1 m long continuously-written fibre Bragg gratings for combined second- and third-order dispersion compensation

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1 mA-threshold operation of 1.3 μm tensile-strained GaInAsP/InP MQW lasers

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1 Mb 0.41 µm² 2T-2R Cell Nonvolatile TCAM With Two-Bit Encoding and Clocked Self-Referenced Sensing

184

1 Mb/s 802.3 LAN (1BASES) For Sonet Intra-site DCC Message Distribution

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1 M-cell 6b/cell analog flash memory for digital storage

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1 Megabit Burst Mode EPROM Provides Unlimited 15ns Sequential Access Capability

187

1 Megawatt, 20 kHz, isolated, bidirectional 12kV to 1.2kV DC-DC converter for renewable energy applications

188

1 MeV electron irradiation of monolithic, two-terminal InP/Ga_0.47In_0.53As solar cells

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1 MeV Electron Radiation Effects in SnO2 - SiO2 - Silicon Solar Cells

190

1 MHz cascaded Z-source inverters for scalable grid-interactive photovoltaic (PV) applications using GaN device

191

1 MHz high energy passively mode-locked diode-pumped Nd:YVO/sub 4/ laser

192

1 MHz High Speed Fiber-Inline-Polarimeter

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1 MHz high-speed digitally controlled dc-dc converter

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1 MHz Loadline System Useful for Quantifying Dispersion in GaAs FET´s

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1 MHz multi-resonant push-pull 48 V VRM

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1 MHz power factor correction boost converter with SiC Schottky diode

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1 MHz self-driven ZVS full-bridge converter for 48 V power pods

198

1 MHz sinusoidal gate driver for Class DE inverter operating with variable load and frequency

199

1 MHz, 1 kW series resonant converter for ultrasonic transducer using the high frequency power SITs

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1 micrometer wavelength pulse fiber laser assisted black marking on the surface of aluminum oxide

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1 Micron CMOS Technology

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1 million cell brings pipe-fittings in-house

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1 mJ at 16 µm from a NH3 laser

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1 MJ electric gun facility at LLNL

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1 MJ electromagnetic compressor of a strip type with electrical current output into a loading

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1 mJ narrow-linewidth master oscillator fiber amplifier system continuously tunable from 1010 nm to 1086 nm

207

1 mJ narrow-linewidth pulsed fiber MOPA source at 1535 nm

208

1 MJ pulsed current source

209

1 mJ, 380 fs ultrashort pulses from an Yb:YAG single crystal fiber power amplifier

210

1 mJ, multi-kHz, sub-500 fs Diode-pumped Ytterbium Laser Amplifier

211

1 mm Dual-polarization science with CARMA

212

1 mm isotropic detector resolution achieved by X´tal cube detector

213

1 mm³ resolution breast-dedicated PET system

214

1 ms column parallel vision system and its application of high speed target tracking

215

1 MS tracking of target boundaries using contour propagation

216

1 mu m CMOS gate array radiation hardened technology

217

1 MV Accelerator Structure for Cluster Injector

218

1 MV repetition-rated modulator

219

1 MV ultra-fast LTD generator

220

1 MV vacuum insulation for the ITER neutral beam injectors

221

1 mW CMOS polyphase channel filter for Bluetooth

222

1 mW CW 38 nm Tunable 1.5 μm VCSELS with Tuning Voltage Below 4 V

223

1 mW CW RT 1.55 /spl mu/m tunnel VCSEL: thermal and electrical characteristics of GaAs/AlAs metamorphic mirrors

224

1 MW Peak Power, Sub-Nanosecond Master Oscillator Fiber Power Amplifier

225

1 MW peak-, 20 W average-power, sub-nanosecond pulse amplifier

226

1 MW, 140 GHz, CW gyrotron for Wendelstein 7-X

227

1 MW, 140 GHz, CW gyrotron for Wendelstein 7-X

228

1 MWh superconductive magnetic energy storage

229

1 MWp grid connected PV systems in the village of Kayubihi Bali; Review on location´s characteristics and its technical specifications

230

1 nA beam position monitoring system

231

1 nJ all-fiber 108 MHz mode-locked erbium oscillator at 1.56 μm

232

1 nm NiSi/Si Junction Design based on First-Principles Calculation for Ultimately Low Contact Resistance

233

1 petawatt OPCPA laser in Russia: Status and expectations

234

1 PPM precision self-calibration of scale factor in MEMS Coriolis vibratory gyroscopes

235

1 ppm/°C bandgap with multipoint curvature-compensation technique for HVIC

236

1 PPM: Potentiometric measuring system [advertisement]

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1 Tb/s - 4×343 Gb/s subcarriers on 50GHz grid - transmission over 480 km SMF with 22 GHz bandwidth semiconductor modulator

238

1 Tb/s (40 Gb/s/spl times/25 channel) DWDM quasi-DM soliton transmission over 1,500 km using dispersion-managed single-mode fiber and conventional C-band EDFAs

239

1 Tb/s WDM-OFDM-PON power budget extension techniques

240

1 Tb/s·km WDM transmission over multimode fibre link

241

1 Tbit/inch2 very high-density recording in polycrystalline PZT/SRO/SiO2/Si thin film

242

1 Tbit/s (10×10.7 Gbit/s) transoceanic transmission using 30 nm wide broadband optical repeaters with A_eff-enlarged positive dispersion fibre and slope-compensating DCF

243

1 Tbit/s (100 Gbit/s×10 channel) OTDM/WDM transmission using a single supercontinuum WDM source

244

1 Tbit/s (100×10.7 Gbit/s) transPacific transmission using single-stage 980 nm-pumped C-band optical repeaters without forward error correction

245

1 Tbit/s (101/spl times/10 Gbit/s) transmission over transpacific distance using 28 nm C-band EDFAs

246

1 Tbit/s (111 Gbit/s/ch X 10 ch) no-guard-interval CO-OFDM transmission over 2100 km DSF

247

1 Tbit/s 256 QAM-OFDM transmission over 560 km with 14.3 bit/s/Hz spectral efficiency

248

1 Tbit/s demultiplexing using low temperature grown InGaAs/InAlAs multiple quantum wells

249

1 Tbit/s field trial with 100 GHz spacing over 91 km SMF using 43 Gbit/s/channel OTN interface prototype

250

1 Tbit/s km transmission experiment at 16 Gbit/s using conventional fibre

251

1 Tbit/s single-channel coherent optical OFDM transmission with trellis-coded modulation

252

1 Tbit/s three-carrier dual polarization 16-QAM superchannel transmission over 1500 km using modified fixed look-up table based MAP detection

253

1 Tbps transmission system based on hierarchical approach to Wavelet Packet Transform OFDM

254

1 THz bandwidth probing of devices and integrated circuits

255

1 THz harmonic generation from sub-THz oscillating resonant tunnelling diode

256

1 THz lightwave synthesised frequency sweeper with synchronously tuned bandpass filter

257

1 THz Modulation in InGaAsP Multiple Quantum Wells for 40 Gb/s Applications

258

1 THz multi-channel optical frequency shifter using quasi-phase-matched LiNbO₃ wavelength converters

259

1 THz repetition rate multichannel pulse train source using an arrayed waveguide grating

260

1 THz repetition rate WDM pulse train generation from an arrayed-waveguide grating

261

1 THz-bandwidth optical comb generation using Mach-Zehnder-modulator-based flat comb generator with optical feedback loop

262

1 THz-bandwidth proper for high-speed devices and integrated circuits

263

1 THz-step bandwidth upgrades in broadband Raman amplifier by adding pump laser diodes

264

1 to 20 GHz CMOS distributed mixer using asymmetric coplanar strip transmission lines

265

1 to 20 GHZ Monolithic Distributed Amplifier using GaAs MESFET´S or HEMT´S

266

1 to 220 GHz Complex Permittivity Behavior of Flexible Polydimethylsiloxane Substrate

267

1 to 25 GHz vacuum FET distributed amplifier analysis

268

1 to 3 GHz Wideband Low Noise Amplifier design

269

1 Tutorial Series Perspectives on Large-Scale Scientific Computation

270

1 V 1.25 GS/s 8 mW D/A Converters for MB-OFDM UWB Transceivers

271

1 V 10 GHz CMOS frequency divider with low power consumption

272

1 V 2 GHz CMOS frequency divider

273

1 V all-MOS ΣΔ A/D converters in the log-domain

274

1 V and 10 V SNS Programmable Voltage Standards for 70 GHz

275

1 V CMOS current reference with 50 ppm/°C temperature coefficient

276

1 V CMOS current references for wide-temperature range applications

277

1 V CMOS instrumentation amplifier with high DC electrode offset cancellation for ECG acquisition systems

278

1 V CMOS output stage with excellent linearity

279

1 V compact class-AB CMOS log filters

280

1 V FM demodulator circuit

281

1 V full swing bootstrapped CMOS inverter circuit

282

1 V input sampling circuit with improved linearity

283

1 V mixed-signal circuits in a 0.5 μm CMOS technology

284

1 V power supply, low-power consumption A/D conversion technique with swing-suppression noise shaping

285

1 V programmable josephson voltage standard and its applications at NIM

286

1 V rail-to-rail constant-g_m CMOS op amp

287

1 V supply second generation current conveyor in standard CMOS technology for low voltage low power analog circuits applications

288

1 V UWB CG LNA at 3–8 GHz with bulk-bias method

289

1 V, 0.18 μm-area and power efficient UWB LNA utilising active inductors

290

1 V, high speed, full swing non-complementary BiCMOS inverter circuit using feedback scheme

291

1 volt CMOS bluetooth front-end

292

1 volt DC programmable Josephson voltage standard

293

1 Volt digital logic circuits realized by stress-resilient ALN parallel dual-beam MEMS relays

294

1 volt Josephson fast reversed dc source

295

1 volt, 1 GHz nems switches

296

1 W (pulsed) vertical cavity surface emitting laser

297

1 W 0.8 /spl mu/m BiCMOS adaptive Q-current controlled class-AB power amplifier for portable sound equipments

298

1 W 980 nm Pump Modules with Very High Efficiency

299

1 W A1InGaN based green laser diodes

300

1 W CW reliable λ=730 nm aluminium-free active layer diode laser

301

1 W CW single frequency, diffraction-limited unstable resonator semiconductor laser with distributed Bragg reflector mirrors

302

1 W CW, 645 nm GaInP/GaAlInP Broad Stripe Laser Diodes

303

1 W CW, 672 nm visible laser diodes

304

1 W CW, diffraction-limited, tunable external-cavity semiconductor laser

305

1 W diffraction-limited-beam operation of resonant-optical-waveguide diode laser arrays at 0.98 mu m

306

1 W fibre coupled power InGaAsP/InP 14xx pump laser for Raman amplification

307

1 W high brightness index guided tapered laser at 980 nm using Al-free active region materials

308

1 W Ku-band AlGaAs/GaAs power HBT´s with 72% peak power-added efficiency

309

1 W Ku-band AlGaAs/GaAs power HBTs with 72% peak power-added efficiency

310

1 W operation of singly ionized silver and copper lasers

311

1 W single-transverse-mode Yb-doped double-clad fibre laser at 978 nm

312

1 W, coherent, monolithically integrated master oscillator power amplifier

313

1 W, Highly Efficient, Ultra-Broadband Non-Uniform Distributed Power Amplifier in GaN

314

1 W/mm power pseudomorphic HFET with optimised recess technology

315

1 W/mm RF power density at 3.2 GHz for a dual-layer RESURF LDMOS transistor

316

1 Watt 14xy InGaAsP/InP ridge waveguide pump laser diodes with low vertical farfield and high efficiency

317

1 watt broad Ka-band ultra small high power amplifier MMICs using 0.25-/spl mu/m GaAs PHEMTs

318

1 Watt C Band Amplifier

319

1 watt compact Ka-band MMIC power amplifiers using lumped element matching circuits

320

1 Watt Er/Yb singlemode superfluorescent optical fibre source

321

1 Watt from 1.56 μm single frequency semiconductor disk laser

322

1 Watt, 65% PAE K-band AlGaAs/GaAs heterojunction bipolar transistors using emitter air-bridge technology

323

1 Watt, 65% PAE K-band AlGaAs/GaAs heterojunction bipolar transistors using emitter air-bridge technology

324

1 X 12 even fanout using multimode interference optical beam splitter on silicon nanomembrane

325

1 X 18 Array Of Low Voltage, Asymmetric Fabry-Perot Modulators For Gigabit Data Transmission Applications

326

1 x 4 optical interconnect using electronically controlled angle steering of spatial solitons

327

1 x 8 self-routing of 40 Gbit/s phase-modulated packets

328

1 x N fiber bundle scanning switch

329

1% efficiency Al_0.3Ga_0.7As planar-doped-barrier electron emitters

330

1-µm bubble ion-implanted devices with two-level ion-implanted layers between propagation tracks

331

1-µm MOS process using anisotropic dry etching

332

1—2-keV Boron implants into silicon

333

1-μm Enhancement Mode GaAs N-Channel MOSFETs With Transconductance Exceeding 250 mS/mm

334

1μ MOS Devices with Self-Aligned Titanium Silicide CVD Tungsten as First Metallisation Level

335

1-μm and 1.3-μm femtosecond lasers mode-locked using quantum-dot-based saturable absorbers

336

1-µJ, Sub-100-fs pulses from a high-repetition-rate optical parametric chirped-pulse amplifier in the mid-infrared

337

1-µm waveband, 10Gbps transmission with a wavelength tunable single-mode selected quantum-dot optical frequency comb laser

338

1-µm waveband, 12.5-Gbps transmission with a wavelength tunable single-mode selected quantum-dot optical frequency comb laser

339

1µm-thickness 64-channel surface electromyogram measurement sheet with 2V organic transistors for prosthetic hand control

340

1× N Multimode Interference Beam Splitter Design Techniques for On-Chip Optical Interconnections

341

1×11 few-mode fiber wavelength selective switch using photonic lanterns

342

1×16 optical packet switch sub-system with a monolithically integrated InP optical switch

343

1×3 optical drop splitter in a rod-type silicon photonic crystal

344

1×4 Optical packet switching of variable length 640 Gbit/s data packets using in-band optical notch-filter labeling

345

1×6 multicasting operation in an LCOS-and-AWG-based wavelength selective switch

346

1×8 InP optical phased-array switch with integrated inline power monitors

347

1×8 Si ring Mux/DeMux with ultra-low tuning power

348

1×N self-made polymer optical fiber based splitter for POF-650nm-LED based application

349

1λ × 224 Gb/s 10 km transmission of polarization division multiplexed PAM-4 signals using 1.3 μm SiP intensity modulator and a direct-detection MIMO-based receiver

350

1λ,6 bits/symbol, 280 and 350 Gb/s direct detection transceiver using intensity modulation, polarization multiplexing, and inter-polarization phase modulation

351

1-μm Periodical grating structure on stainless steel designed by high-power nanosecond pulsed fiber lasers

352

1-μm waveband 10-Gbit/s transmission over a 7-km single-mode hole assisted fiber using a harmonically mode-locked semiconductor laser

353

1μs-conform line length of the Transparent Clock Mechanism defined by the Precision Time Protocol (PTP Version 2)

354

1–100GHz microwave photonics link technologies for next-generation WiFi and 5G wireless communications

355

1–10GHz inductorless receiver in 0.13µm CMOS

356

1–2 GHz tuning frequency band pass filter with controllable pass band and high stopband rejection

357

1–2.5GHz Multistage Wilkinson 2-way power divider for checkout applications

358

1–20 Ghz kΩ-range BiCMOS 55 nm reflectometer

359

1–3 microfabricated composite acoustic matching layers for high frequency transducers

360

1–3 piezocomposite design optimised for high frequency kerfless transducer arrays

361

1–3 Piezocomposites Based on Super-Cell Structuring for Transducer Applications

362

1–5GHz wideband low noise amplifier using active inductor

363

1–6 GHz UWB phase shifter design and implementation with surface micromachining

364

1–7 GHz Single-Ended Power Amplifier based on GaN HEMT grown on Si-substrate

365

1–7 GHz wideband low loss SPDT switch MMIC

366

1–8 GHz high efficiency single stage travelling wave power amplifier

367

1–100 kHz Magnetic Shielding Efficiency by Metallic Sheets: Modeling and Experiment by a Laboratory Test Bed

368

1&1 Advertisement

369

1&1 Advertisement

370

1μs fast acquisition 2.4 GHz low voltage frequency synthesizer for FH-CDMA mobile communications

371

1φ 3W grid-connection PV power inverter with partial active power filter

372

1×2 all optical packet switch

373

1×2 all-optical switch using photochromic-doped waveguides

374

1×2 and 1×4 electrooptic switches

375

1×2 micro mechanical fiber optical switches using v-grooves on sidewall

376

1×2 optical packet switch using all-optical header processing

377

1×2 optical switch for WDM transmission systems

378

1×3 active GaAs/AlGaAs planar waveguide optical switch

379

1×4 all-optical packet switch at 10 gb/s

380

1×4 all-optical packet switch with all-optical header processing

381

1×4 fused multicore single-mode fibre coupler: theory, fabrication and analysis

382

1×4 optical switch based on transversal filter configuration with constant power consumption

383

1×4 space switching and simultaneous all-optical wavelength conversion at 2,488 Gbit/s using a single monolithically integrated multiwavelength laser

384

1×4 thermo-optic switch based on four-branch waveguide

385

1×8 8 Gbit/s transmitter module for optical space switch applications

386

1×8 micro-mechanical switches based on moving waveguides for optical fiber network switching

387

1×8 star coupler waveguide device with multifiber-connector-compatible connections

388

1×EV-DO system performance: analysis and simulation

389

1×EV-DO system-level simulator based on measured link-level data

390

1×N fibre coupler employing diffractive optical element

391

1×N splitters on silica substrates with low polarization dependent loss

392

1×N² wavelength-selective switch with telescope-magnified 2D input/output fiber collimator array

393

1×N² wavelength-selective switch with two cross-scanning one-axis analog micromirror arrays in a 4-f optical system

394

1(1/ 2) -Dimension cepstrum feature analysis of pulse signals

395

1*16 lithium niobate optical switch matrix with integral TTL compatible drive electronics

396

1*2 lossless semiconductor optical switch

397

1*2 polarisation-independent acousto-optic filter tunable over 1.30-1.56 mu m

398

1*3 linear array singlemode fibre couplers

399

1-, 1.5-, and 2-μm Fiber Lasers Q-Switched by a Broadband Few-Layer MoS₂ Saturable Absorber

400

1,000 A/cm² cathode: To be or not to be?

401

1,000 electronic devices per living person: Dream or nightmare?

402

1,000-km transmission of 20-Gbit/s QPSK-NRZ co-polarized DWDM signals with spectral efficiency of 1 bit/s/Hz using coherent detection

403

1,001 robot architectures for 1,001 robots [Industrial Activities]

404

1,100,000-Kva Short-Circuit Transformer in the New High-Capacity Switchgear Testing Laboratory [includes discussion]

405

1,200-Volt traction in the United States of America

406

1,25 kW S band pulsed Transmit/Receive module for microwave tube amplifier replacement

407

1,25 kW S band pulsed Transmit/Receive module for microwave tube amplifier replacement

408

1,400 Engineers and guests attend Summer general meeting in Ithaca, N.Y.

409

1,550-nm uncooled EA-modulator and EA/DFB for 10/40-Gbit/s low-power-consumption transceivers

410

1,600 Members Log In to Inaugural SSCS Webinars: Hour-Long Lecture by SSCS Luminary Tom Lee Draws More Than 1,000 [Chapters]

411

1,64 mkm Er:YAG laser resonantly pumped by a solid state Er:glass laser

412

1,900 Members and guests attend AIEE Fall general meeting in Chicago, Ill

413

1. Analog and digital signal processing

414

1. Basic Information on the GIS/GIL/SF6 Tutorial

415

1. Converter circuits

416

1. H. Tropper memorial lecture

417

1. plenaria en telecomunicaciones: "subjective and objective video quality assessment. a parametric model for digital television coded with h.264"

418

1. Plenary Session

419

1. Plenary session

420

1. Properties of charge carriers

421

422

1. The 701 in the IBM Technical Computing Bureau

423

1. Welcome from the conference general chairs

424

1..25-Gb s^-1 bidirectional multimode-fibre data link using a dual-purpose vertical-cavity laser & detector

425

1.0 µm CMOS process for highly stable tera-ohm polysilicon load 1Mb SRAM

426

1.0 μm Band, 4.22-THz Spectral Bandwidth WDM Signal Pulse Source Using Photonic Crystal Fibers

427

1.0 μm band supercontinuum generation using photonic crystal fiber and its application as multi-wavelength pulse source

428

1.0 bit/secHz spectral efficiency in single polarization at 2000km with narrowly filtered intensity modulated signals

429

1.0 cm² silicon carbide P-i-N diodes for pulsed power applications

430

1.0 dB low-loss coupling of laser diode to single-mode fibre using a planoconvex graded-index rod lens

431

1.0 Gbps LVDS transceiver design for LCD panels

432

1.0 GHz monolithic p-i-n MODFET photoreceiver using molecular beam epitaxial regrowth

433

1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance

434

1.0 Underwater Acoustics And Acoustical Oceanography 1.4 Acoustical oceanography; Correlations Amongst High Definition Side-Scan Sonar Images and Corresponding Remote Operating Vehicle Images of Geological, Man-Made and Possible Animal Remains Along the B

435

1.0-µm n-well CMOS/bipolar technology

436

1.0μm co-seeded Er:Yb fiber amplifier with 50W output power at 1.5μm

437

1.0–1.7 μm wavelength-tunable ultrashort pulse generation using high-power mode-locked Yb-doped fiber laser and highly-nonlinear photonic crystal fiber

438

1.0–1.7- $\\mu$ m Wavelength-Tunable Ultrashort-Pulse Generation Using Femtosecond Yb-Doped Fiber Laser and Photonic Crystal Fiber

439

1.0-/spl mu/m n-Well CMOS/Bipolar Technology

440

1.00 MeV proton radiation resistance studies of single-junction and single dual-junction amorphous-silicon alloy solar cells

441

1.02 μm vertical-cavity surface-emitting lasers for perfluorinated graded index POF communications

442

1.02 Petawatt hybrid-scheme laser system based on LBO-OPCPA near 800 nm

443

1.02/spl mu/m strained InGaAs/AlGaAs Double Quantum-Well High-Power Lasers with GaInP Buried Waveguides

444

1.03 μm Yb-doped mode-locked fiber laser for time-domain THz spectroscopy

445

1.03 GHz operation of a low-loss SAW filter using 3-phase unidirectional transducers with thin dielectric layered feed electrodes

446

1.03-Exabit/skm Super-Nyquist-WDM transmission over 7,326-km seven-core fiber

447

1.04 GBd low EMI digital video interface system using small swing serial link technique

448

1.047-μm Yb:Sr₅(PO₄)₃F energy storage optical amplifier

449

1.047GHz, 1.2V, 90nm CMOS, 2-Way VLIW DSP Core Using Saturation Anticipator Circuit

450

1.04-Tbit/s DWDM transmission experiment based on alternate-polarization 80-Gbit/s OTDM signals

451

1.05 GHz MEMS oscillator based on lateral-field-excited piezoelectric AlN resonators

452

1.05 Tbit/s WDM transmission over 8,186 km using distributed Raman amplifier repeaters

453

1.05 W from the mostly diffraction-limited 1.55-/spl mu/m InGaAsP/InP-tapered laser

454

1.05-1.44 µm tunability and performance of the CW Nd³⁺:YAG laser

455

1.05-1.44 µm tunable high-power laser emission on 18 CW transitions in Nd³⁺:YAG

456

1.05-GHz CMOS oscillator based on lateral- field-excited piezoelectric AlN contour- mode MEMS resonators

457

1.05V 10.2mW WCDMA analog baseband in 65nm digital CMOS technology

458

1.05V on-request 10b General-Purpose ADC in 65nm digital CMOS technology

459

1.06 μm absorption coefficients of deuterated KDP with 70--100% deuteration

460

1.06 μm All-fiber Gyroscope With Noise Subtraction

461

1.06 $\\mu$ m Picosecond Pulsed, Normal Dispersion Pumping for Generating Efficient Broadband Infrared Supercontinuum in Meter-Length Single-Mode Tellurite Holey Fiber With High

462

1.064- and 1.32-µm Nd:YAG single crystal fiber lasers

463

1.07 /spl mu/m (InAs)/sub 1//(GaAs)/sub 2/short period superlattice strained quantum well ridge waveguide laser

464

1.08-2.2-/spl mu/m supercontinuum generation from Yb/sup 3+/-doped fiber laser

465

1.0Â¿1.6 Â¿m planar avalanche photodiode by LPE grown InP/InGaAs/InP DH structure

466

1.0-mA-threshold uncoated lasers by impurity-induced disordering

467

1.0-V and 1.5-V operation of 4-GHz tuned amplifiers implemented in a 0.1-/spl mu/m CMOS technology on bulk and SOI substrates

468

1.0-volt, 9-bit pipelined CMOS ADC

469

1.1 μm-range low resistive VCSELs with buried type-II tunnel junctions

470

1.1 /spl mu/m range InGaAs VCSELs for high-speed optical interconnections

471

1.1 Best paper candidate session

472

1.1 Computing´s energy problem (and what we can do about it)

473

1.1 Gb/s pseudorandom pulse-code modulation of 1.27 μm wavelength c.w. InGaAsP/InP d.h. lasers

474

1.1 Gbit/s RF-interconnect based on 10 GHz RF-modulation in 0.18 μm CMOS

475

1.1 Ghz integer N phase lock loop with superior single event upset and total dose properties suitable for commercial space applications

476

1.1 GHz MSM photodiodes on relaxed Si/sub 1-x/Ge/sub x/ grown by UHV-CVD

477

1.1 GHz oscillator using bondwire inductance

478

1.1 GHz silicon blade nano-electromechanical resonator featuring 20 nm gap lateral transducers

479

1.1 kV 4H-SiC power UMOSFETs

480

1.1 kW nanosecond fiber amplifier based on spectral beam combination

481

1.1 Silicon technologies and solutions for the data-driven world

482

1.1 TMACS/mW Fine-Grained Stochastic Resonant Charge-Recycling Array Processor

483

1.1 TMACS/mW Load-Balanced Resonant Charge-Recycling Array Processor

484

1.1 to 1.6 µm silicon light emitting diodes and optical gain

485

1.1 to 1.6GHz distributed differential oscillator global clock network

486

1.1 to 1.9GHz CMOS VCO for tuner application with resistively tuned variable inductor

487

1.1 Tools & design productivity

488

1.1 V 1 GHz communications router with on-chip body bias in 150 nm CMOS

489

1.1 V class AB output stage in standard 0.8 μm CMOS technology

490

1.1 V full-swing double bootstrapped BiCMOS logic gates

491

1.1 V high speed, low power BiCMOS logic circuit

492

1.1 W CW, diffraction-limited operation of a monolithically integrated flared-amplifier master oscillator power amplifier

493

1.1 W output power continuous-wave Cr-forsterite laser at room temperature

494

1.1 W/mm high power GaAs/InGaP composite channel FET with asymmetrical LDD structure at 26 V operation

495

1.1-μm-Range High-Speed Tunnel Junction Vertical-Cavity Surface-Emitting Lasers

496

1.1μm single mode VCSEL-based 4-channel ?? 10-Gbit/s parallel-optical module

497

1.1-μm-range InGaAs VCSELs for high-speed optical interconnections

498

1.1-μm-range tunnel junction VCSELs with 27-GHz relaxation oscillation frequency

499

1.1-µm-range 12 channels × 10-Gbit/s transmission over 600m MMF using high-density optical modules

500

1.1. Terawatt, kilohertz femtosecond laser

501

1.1: The truth about terahertz

502

1.1-1.2 μm multiple-wavelength vertical cavity surface emitting laser array with highly strained GaInAs/GaAs QWs on patterned substrate

503

504

1.12GHz Opto-Acoustic Oscillator

505

1.12-Tb/s 32-QAM-OFDM superchannel with 8.6-b/s/Hz intrachannel spectral efficiency and space-division multiplexing with 60-b/s/Hz aggregate spectral efficiency

506

1.13-Gbit/lightwave transmission system

507

1.13-GHz repetition rate, sub-femtosecond timing jitter, CNT-mode-locked ultrafast Yb:KYW laser

508

1.14 /spl mu/m strained-layer InGaAs-GaAs-InGaP SQW lasers on ternary In/sub 0.03/Ga/sub 0.97/As substrates by metalorganic chemical vapor deposition

509

1.14 b/s/Hz spectrally efficient 50/spl times/85.4-Gb/s transmission over 300 km using copolarized RZ-DQPSK signals

510

1.14 b/s/Hz spectrally-efficient 50/spl times/85.4 Gb/s transmission over 300 km using copolarized CS-RZ DQPSK signals

511

1.14-GHz self-aligned vibrating micromechanical disk resonator

512

1.15 Tb/s Nyquist PDM 16-QAM transmission with joint matched filtering and frequency-domain equalization

513

1.15-μm wavelength oxide-confined quantum-dot vertical-cavity surface-emitting laser

514

1.156-GHz self-aligned vibrating micromechanical disk resonator

515

1.15mW mixed-mode neuro-fuzzy accelerator for keypoint localization in image processing

516

1.16 µs continuously tunable optical delay of a 100-Gb/s DQPSK signal using wavelength conversion and chromatic dispersion in an HNLF

517

1.16 GHz dual-modulus 1.2 μm CMOS prescaler

518

1.16 PW sub-30fs Ti:Sapphire laser system of seeding with optical parametrical amplified femtosecond laser

519

1.17-μm highly strained GaInAs-GaAs quantum-well laser

520

1.1-Gb/s White-LED-Based Visible Light Communication Employing Carrier-Less Amplitude and Phase Modulation

521

1.1-GDI/s transmission between pausible clock domains

522

1.1K-Gate CMOS/SOI Gate Array by Laser Recrystallization Technique

523

1.1-kW Ytterbium Monolithic Fiber Laser With Assembled End-Pump Scheme to Couple High Brightness Single Emitters

524

1.1V 1GHz communications router with on-chip body bias in 150nm CMOS

525

1.1-V 200 MS/s 12-bit digitally calibrated pipeline ADC in 40 nm CMOS

526

1.1-V, 8-bit, 12 MS/s asynchronous reference-free successive-approximation-register analogue-todigital converter in 0.18 μm CMOS with separated capacitor arrays

527

1.1-W continuous-wave 1480-nm semiconductor lasers with distributed electrodes for mode shaping

528

1.1-W continuous-wave 1480-nm unstable-cavity lasers with distributed electrodes for mode shaping

529

1.1-W femtosecond diode-pumped Yb:KGd(WO/sub 4/)/sub 2/ laser

530

1.1W Four-Wavelength Raman Pump Using BH Lasers

531

1.2 μm BICMOS Technology for Mixed Analog-digital Applications

532

1.2 μm band high-density multiple-wavelength vertical cavity surface emitting laser array

533

1.2 μm band multiple-wavelength GaInAs/GaAs vertical cavity surface emitting laser array on patterned substrate

534

1.2 μm range GaInAs SQW lasers using Sb as surfactant

535

1.2 Architecture

536

1.2 Cloud 2.0 clients and connectivity — Technology and challenges

537

1.2 dB/cm gain in erbium:lutecium co-doped Al/P silica fibre

538

1.2 degree narrow divergence intense directional lasing from extremely deformed non-circular micro-ring cavities

539

1.2 Financial applications

540

1.2 Gb/s closely-spaced FDMA-FSK direct-detection star network

541

1.2 Gb/s integrated laser driver with temperature compensation for modulation current

542

1.2 Gb/s SONET/SDH demux in CMOS technology

543

1.2 Gbit/s error-correcting en/decoder for optical fibre communication in 1.2 μm CMOS

544

1.2 Gbit/s fully integrated transimpedance optical receiver OEIC for 1.3-1.55 mu m transmission systems

545

1.2 Gbit/s optical DPSK heterodyne detection transmission system using monolithic external-cavity DFB LDs

546

1.2 Gbit/s optical fibre transmission experiment over 113.7 km using a 1.528 μm distributed-feedback ridge-waveguide laser

547

1.2 GBit/s Pseudo Random Pulse Generator Using Multiplexing with GaAs Mesfet Gates

548

1.2 Gbit/s, 201 km optical DPSK heterodyne transmission experiment using a compact, stable external fibre cavity DFB laser module

549

1.2 Gbit/s, 218 km transmission experiment using inline Er-doped optical fibre amplifier

550

1.2 Gbit/s, 52.5 km optical fibre transmission experiment using OEICs on GaAs-on-InP heterostructure

551

1.2 Gbps non-imaging MIMO-OFDM scheme based VLC over indoor lighting LED arrangments

552

1.2 Gbps/pin simultaneous bidirectional transceiver logic with bit deskew technique

553

1.2 GHz band wave propagation measurements in concrete building for indoor radio communications

554

1.2 GHz GaAs shift register IC for dead-time-less TDC application

555

1.2 GHz Temperature-Stable SAW Oscillator

556

1.2 GS/s Hadamard Transform front-end for compressive sensing in 65nm CMOS

557

1.2 J High Energy Diode Pumped 1535 Nm Er³⁺Yb³⁺: glass Laser

558

1.2 kbit/s harmonic coder using auditory filters

559

1.2 kV Rectifiers Thermal Behaviour: comparison between Si PiN, 4H-SiC Schottky and JBS diodes

560

1.2 kV trench insulated gate bipolar transistors (IGBT´s) with ultralow on-resistance

561

1.2 micron, high speed, high density CMOS analog library

562

1.2 mJ, 37 ns single-moded pulses at 10 kHz repetition rate from a Q-switched ytterbium fiber laser

563

1.2 MV, 800 kA, 150 ns pulsed power generator for powering Field Reversed Ion Ring Experiments

564

1.2 mW 2.4 GHz PLL for ZigBee and BLE standard in single-well 0.18 ?m CMOS with efficient divider architecture

565

1.2 MW DC-DC converter

566

1.2 MW KLYSTRON FOR ASYMMETRIC STORAGE RING B FACTORY

567

1.2 ps pulses at low base repetition rates for 100 Gbit/s per channel optical communications networks

568

1.2 ps pulses from passively mode-locked laser diode pumped Er-doped fibre ring laser

569

1.2 Tb/s Superchannel Transmission Over 80 $,\\times,$ 100 km ULAF Using Nyquist FDM DP-QPSK

570

1.2 Tb/s symmetric WDM-OFDMA-PON over 90km straight SSMF and 1∶32 passive split with digitally-selective ONUs and coherent receiver OLT

571

1.2 Tb/s ultredense WDM long reach and spectral efficiency access link with digital detection

572

1.2 Tbit/s (30 ch×40 Gbit/s) WDM transmission over 85 km fibre

573

1.2 Tbit/s (30×42.7 Gbit/s ETDM channel) WDM transmission over 3×125 km with forward error correction

574

1.2 Tbit/s (30/spl times/42.7 Gbit/s ETDM optical channel) WDM transmission over 376 km with 125 km spacing using forward error correction and carrier-suppressed RZ format

575

1.2 Tbit/s orthogonal PDM-RZ-QPSK DWDM signal transmission over 1040 km SMF-28

576

1.2 The future of IC design innovation

577

1.2- to 2.2- $\\mu$ m Tunable Raman Soliton Source Based on a Cr : Forsterite Laser and a Photonic-Crystal Fiber

578

1.2 V 0.18 µm CMOS imager with column-level oversampling

579

1.2 V 10-bit 75 MS/s Pipelined ADC With Phase-Dependent Gain-Transition CDS

580

1.2 V CMOS 1-10 GHz traveling wave amplifiers using coplanar waveguides as on-chip inductors

581

1.2 V CMOS output stage with improved drive capability

582

1.2 V CMOS switched-capacitor circuits

583

1.2 V gigahertz-resonance-ring ICO/VCO

584

1.2 V mixed analog/digital circuits using 0.3 /spl mu/m CMOS LSI technology

585

1.2 V operation 1.1 W heterojunction FET for portable radio applications

586

1.2 V operation power heterojunction FET´s for digital cellular applications

587

1.2 V sub-nanoampere A/D converter

588

1.2 V–0.18- $\\mu text{m}$ CMOS Temperature Sensors With Quasi-Digital Output for Portable Systems

589

1.2 V, 35 mW CMOS optical transceiver ICs for 50 Mbit/s burst-mode communication

590

1.2 Volt CMOS Readout Electronics for Capacitive Sensors

591

1.2 W, Tunable, continuous-wave, single-frequency, solid-state blue source

592

1.2 W-average-power, Yb-fiber-pumped, picosecond ultraviolet source at 355 nm based on BiB3O6

593

1.2μm Bi-CMOS Technology with High Performance ECL

594

1.2-μm GaAsP/InGaAs strain compensated single-quantum-well diode laser on GaAs using metal-organic chemical vapor deposition

595

1.2μm highly strained GalnAs/GaAs quantum well lasers for singlemode fibre datalink

596

1.2–2.2-μm tunable Raman soliton source based on a Cr:Forsterite-laser and a photonic-crystal fiber

597

1.2-μM non-epi CMOS smart power IC with four H-bridge motor drivers for portable applications

598

1.2: Sub-millimeter and THz power amplifier development at northrop grumman

599

1.2- $\\mu$ m Semiconductor Disk Laser Frequency Doubled With Periodically Poled Lithium Tantalate Crystal

600

1.22 Tbit/s WDM transmission over 7,221 km with 38 nm bandwidth expanded by distributed Raman amplifier and EDFA

601

1.22mW/Gb/s 9.6Gb/s data jitter mixing forwarded-clock receiver robust against power noise with 1.92ns latency mismatch between data and clock in 65nm CMOS

602

1.23 μm long wavelength highly strained GaInAs/GaAs quantum well laser

603

1.24 Gb/s, 40 km optical code division multiplexing transmission by using spectral bipolar coding of broadband incoherent light

604

1.24 Gbit/s optical code division multiplexing transmission over 40 km dispersion-shifted fibre by bipolar coding using broadband incoherent light source

605

1.244 Gbit/s 32 channel 121 km transmission experiment using shelf-mounted continuous-phase FSK optical heterodyne system

606

1.24416 Gbit/s demonstration of a transparent optical ATM packet switch node

607

1.244-Gb/s 32-channel transmission using a shelf-mounted continuous-phase FSK optical heterodyne system

608

1.244-gb/s data distribution in 60-GHz remote optical frequency up-conversion systems

609

1.24-Tb/s hybrid SCM/WDM passive optical networks

610

1.25 - 10 Gbit/s Reconfigurable Access Network Architecture

611

1.25 µm deep-groove-isolated self-aligned ECL circuits

612

1.25 μm Mosi2/Poly Gate CMOS-SOS Isoplanar Technology

613

1.25 µm Quantum Dot Tapered External-Cavity Laser, with 1 W Output Power and 30 Nm Tunability

614

1.25 /spl mu/m Deep-Groove-Isolated Self-Aligned Bipolar Circuits

615

1.25 /spl mu/m low threshold current density dots-in-a-well (DWELL) lasers

616

1.25 BGIT/S Indoor Radio link Extension of GIGABIT Ethernet CWDM Access Network

617

1.25 Gb/s burst-mode CMOS PON laser diode driver with Automatic Power Controller

618

1.25 Gb/s burst-mode receiver ICs with quick response for PON systems

619

1.25 Gb/s CMOS differential transimpedance amplifier for gigabit networks

620

1.25 Gb/s low power CMOS limiting amplifier for optical receiver

621

1.25 Gb/s operation of ASE injected RSOA with 50 GHz channel spacing by using injection current adjustment, dispersion management and receiver with decision threshold level control

622

1.25 Gb/s uplink burst-mode transmissions: system requirements and optical diagnostic challenges of EPON physical-layer chipset for enabling broadband optical Ethernet access networks

623

1.25 Gb/s variable transimpedance amplifier in digital CMOS process

624

1.25 Gbit/s bidirectional link in an access network employing a reconfigurable optical add/drop multiplexer and a reflective semiconductor optical amplifier

625

1.25 Gbit/s millimetre-wave band wired/wireless radio-over-fibre system based on RSOA using injection-locking effect

626

1.25 Gbit/s Over 50 m Step-Index Plastic Optical Fiber Using a Fully Integrated Optical Receiver With an Integrated Equalizer

627

1.25 Gbit/s transmission of optical FFH-OCDMA signals over 80 km with 16 users

628

1.25 Gbit/s visible light WDM link based on DMT modulation of a single RGB LED luminary

629

1.25 Gbit/s WDM PON Upstream Transmission Using Fabry-PÃ©rot Laser Diodes Injected by Depolarised CW Supercontinuum Source

630

1.25 Gbit=s ITU-T G.984.2 burst-mode transimpedance amplifier without reset pins

631

1.25 Gbps Optical Data Channel Up-conversion in 20 GHz-Band via a Frequency-Doubling Optoelectronic Oscillator for Radio-Over-Fiber Systems

632

1.25 Gbps single fiber transceivers using low cost polymer straight waveguide for 1.3/1.55 μm data-links

633

1.25 Gbps wireless Gigabit ethernet link at 60 GHz-band

634

1.25 GHz 26-bit pipelined digital accumulator

635

1.25 Micron injection logic technology

636

1.25 V Supply 0.72 V Output Voltage Swing Two-Step Readout CMOS Active Pixel Architecture

637

1.25 volt, low cost, embedded flash memory for low density applications

638

1.25/10.3 Gbit/s burst-mode bit-rate discrimination circuit for coexisting PON systems

639

1.25/10.3 Gbit/s dual-rate burst-mode receiver

640

1.25/10.3-Gbit/s dual-rate burst-mode receiver with automatic bit-rate discrimination circuit for coexisting PON systems

641

1.25/10.3Gbps dual rate algorithm for 10G-EPON burst-mode CDR

642

1.25/2.5-Gb/s burst-mode clock recovery circuit with a novel dual bit-rate structure in 0.18-/spl mu/m CMOS

643

1.25/2.5-Gb/s Dual Bit-Rate Burst-Mode Clock Recovery Circuits in 0.18- $\\mu\\hbox {m}$ CMOS Technology

644

1.25-3.2 Gb/s/ch multi-channel optical interconnection modules and their mass-production

645

1.25-eV GaAsSbN/Ge Double-Junction Solar Cell Grown by Metalorganic Vapor Phase Epitaxy for High Efficiency Multijunction Solar Cell Application

646

1.25-Gb/s 0.25-μm CMOS clock recovery based on phase- and frequency-locked loop

647

1.25-Gb/s 2-m indoor visible light transmission employing wavelength conversion with quasi phase matching device

648

1.25-Gb/s bidirectional transceiver module using 1.5%-Δ silica directional coupler-type WDM

649

1.25Gb/s burst-mode optical receiver for the ethernet PON using 0.35/spl mu/m CMOS technology

650

1.25-Gb/s burst-mode receiver ICs with quick response for PON systems

651

1.25-Gb/s CMOS front-end amplifier for optical receiver

652

1.25-Gb/s Incoherent Spectral OCDMA Transmission Using Integrated En/Decoders

653

1.25Gb/s low jitter dual-loop clock and data recovery circuit

654

1.25-Gb/s Operation at 50-GHz Channel Spacing Based on Intensity Noise Suppression of Wavelength-Locked Fabry–PÉrot Laser Diode

655

1.25-Gb/s Operation of a Spectrum-Sliced Fabry–PÉrot Laser Diode With Intensity Noise Suppression by a Second Fabry–PÉrot Laser Diode

656

1.25-Gb/s regulated cascode CMOS transimpedance amplifier for Gigabit Ethernet applications

657

1.25-Gb/s Transmission Over an Access Network Link With Tunable OADM and a Reflective SOA

658

1.25-Gb/s Wavelength-Division Multiplexed Single-Wavelength Colorless Radio-on-Fiber Systems Using Reflective Semiconductor Optical Amplifier

659

1.25Gb/s WDM bi directional transceiver module using DFB-LD and PLC with spot-size conversion region

660

1.25Gbit/s integrated receiver for optical wireless communication systems

661

1.25-Gbit/s optical transceiver with high sensitivity and high-speed response for GE-PON systems

662

1.25Gbps optical links for mobile handsets

663

1.25Gbps WDM-RoF optical transmission for wired/wireless access network using multi optical carrier suppression in FP LD

664

1.25Gbps wireless Gigabit Ethernet link at 60GHz-band

665

1.25GHz repetition rate operation of a SOA-DFB laser diode based all-optical flip-flop

666

1.25-MHz attenuation measurement system

667

1.25V direct-conversion CMOS transmitter front-end for 900MHz ZigBee applications

668

1.26 μm GaInNAsSb-SQW lasers grown by gas-source MBE

669

1.26 μm vertical cavity laser with two InP/air-gap reflectors

670

1.26 W CW diffraction-limited InGaAsP flared amplifier at 780 nm

671

1.27 μm metamorphic InGaAs quantum well lasers on GaAs substrates

672

1.27 μm resonant cavity PIN photodetector using an InAs/GaAs quantum dot active region grown on GaAs

673

1.27 GHz Graphene-Aluminum Nitride nano plate resonant infrared detector

674

1.27 W, tunable, continuous-wave, single-frequency, solid-state blue source

675

1.27μm atomic argon laser parameters in fission-fragment excited He/Ar and He/Ne/Ar gas mixtures

676

1.27Gb/s/pin 3mW/pin wireless superconnect (WSC) interface scheme

677

1.28 μm InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by metalorganic chemical vapor deposition

678

1.28 Tb/s (32×40 Gb/s) transmission over 4,500 km

679

1.28 Tb/s single wavelength star-16-QAM transmission over up to 800 m of graded-index multimode fibre

680

1.28 Tb/s wavelength conversion for polarisation multiplexed RZ-DPSK signals

681

1.28 Tbit/s (160 Gbit/s×8 wavelengths) throughput variable length packet switching using optical code based label switch

682

1.28 Tbit/s (32×40 Gbit/s) transmission over 1000 km NDSF employing distributed Raman amplification and active gain flattening

683

1.28 Tbit/s (32×40 Gbit/s) WDM transmission over 2400 km of TeraLight^TM/Reverse TeraLight(C) fibres using distributed all-Raman amplification

684

1.28 Tbit/s (32×43 Gbit/s) field trial over 528 km (6×88 km) DSF using L-band remotely-pumped EDF/distributed Raman hybrid inline amplifiers

685

1.28 Tbit/s (64 × 20 Gbit/s) transmission over 4,200 km with 100 km repeater spacing consisting of Raman/EDF hybrid amplifiers

686

1.28 TBIT/s single-polarisation serial OOK optical data generation and demultiplexing

687

1.28 Tbit/s throughput 8/spl times/8 optical switch based on arrays of gain-clamped semiconductor optical amplifier gates

688

1.28 Tbit/s/channel single-polarization DQPSK transmission over 525 km using ultrafast time-domain optical fourier transformation

689

1.28 Tbit/s-70 km OTDM transmission using third- and fourth-order simultaneous dispersion compensation with a phase modulator

690

1.28 Terabit/s (32×40 Gbit/s) WDM transmission over a double-pass free space optical link

691

1.28 terabit/s (32x40 Gbit/s) wdm transmission system for free space optical communications

692

1.28-Tb/s (32 $\\times$ 40 Gb/s) Free-Space Optical WDM Transmission System

693

1.28-Tb/s Demultiplexing of an OTDM DPSK Data Signal Using a Silicon Waveguide

694

1.28Tb/s long-haul superchannel transmission employing EDFA-Raman amplification

695

1.29 μm GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance

696

1.2Gb/s 3.9pJ/b mono-phase pulse-modulation inductive-coupling transceiver for mm-range board-to-board communication

697

1.2-Gb/s true PECL 100K compatible I/O interface in 0.35-μm CMOS

698

1.2Gbps LVDS interface

699

1.2-GHz repetition rate, diode-pumped femtosecond Yb:KYW laser mode-locked by a CNT saturable absorber

700

1.2kbps Fblpc Vocoder With Applications In Phone-to-phone Over Internet

701

1.2-km timing-stabilized, polarization-maintaining fiber link with sub-femtosecond residual timing jitter

702

1.2kV class SiC MOSFETs with improved performance over wide operating temperature

703

1.2kW dual-active bridge converter using SiC power MOSFETs and planar magnetics

704

1.2kW power combiner unit using phase control for 2.4GHz band

705

1.2-mJ, 1-kHz OPCPA system toward few-cycle pulse

706

1.2-mW Online Learning Mixed-Mode Intelligent Inference Engine for Low-Power Real-Time Object Recognition Processor

707

1.2-ps CPA system using an Yb:YAG thin disk regenerative amplifier

708

1.2THz backward wave radiation generated by double bunched sheet beams

709

1.2V 1.6Gb/s 56nm 6F² 4Gb DDR3 SDRAM with hybrid-I/O sense amplifier and segmented sub-array architecture

710

1.2-V 101-GHz W-band power amplifier integrated in a 65-nm CMOS technology

711

1.2-V 5-μW class-AB CMOS log-domain integrator with multidecade tuning

712

1.2-V 5.8-GHz 90nm CMOS RF power amplifier parameter enhancement techniques

713

1.2-V Analog Interface for a 300-MSps HD Video Digitizer in Core 65-nm CMOS

714

1.2V and 8.6mW CMOS differential receiver front-end with 24 dB gain and -11dBm IRCP

715

1.2-V CMOS op-amp with a dynamically biased output stage

716

1.2V constant-gm rail-to-rail CMOS Op-Amp input stage with new overlapped transition regions technique for ECG amplifier

717

1.2-V folded down-conversion wideband mixer in 65-nm CMOS

718

1.2-V fully differential OTA-C lowpass filter based on bulk-driven MOS transistors

719

1.2V low-power four-quadrant CMOS transconductance multiplier operating in saturation region

720

1.2-V Low-Power Multi-Mode DAC+Filter Blocks for Reconfigurable (WLAN/UMTS, WLAN/Bluetooth) Transmitters

721

1.2V NOR flash memory in system-in-package

722

1.2-V Supply, 100-nW, 1.09-V Bandgap and 0.7-V Supply, 52.5-nW, 0.55-V Subbandgap Reference Circuits for Nanowatt CMOS LSIs

723

1.2-V, 10-bit, 60-360 MS/s time-interleaved pipelined analog-to-digital converter in 0.18 μm CMOS with minimised supply headroom

724

1.2-v, 16-bit Audio A/d Converter With Suppressed Latch Error Noise

725

1.3 µm Operation of Ge_xSi_1-x/Si strained-layer superlattice avalanche photodetectors

726

1.3 μLD Module with Optical Isolator Using YIG Crystals by the Floating Zone Method

727

1.3 μm 35 km fibre-optic microwave multicarrier transmission system for satellite Earth stations

728

1.3 μm band InGaAs MQWs with InGaP metamorphic graded buffer layer on GaAs substrate

729

1.3 μm edge-emitting diodes launching 250 μW into a single-mode fibre at 100 mA

730

1.3 μm emitting, self assembled quantum dot lasers

731

1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°

732

1.3 μm InGaAlAs asymmetric corrugationpitch- modulated DFB lasers with high mask margin at 28 Gbit/s

733

1.3 μm InGaAsP DCPBH multiquantum-well lasers

734

1.3 μm InGaAsP index-guided multirib waveguide laser array

735

1.3 μm InP/InGaAsP channelled-substrate buried-heterostructure laser monolithically integrated with a photodetector

736

1.3 μm photonic crystal fiber Raman laser

737

1.3 μm quantum-dot electro-absorption modulator

738

1.3 μm short-cavity VCSELs enabling error-free transmission at 25 gbit/s over 25 km fibre link

739

1.3 μm, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applications

740

1.3 μm-Band Laser with a High Characteristic Temperature (T0=130 K) on an InGaAs Ternary Substrate Grown by the Traveling Liquidus-Zone Method

741

1.3 µm 28 Gb/s EMLs with hybrid waveguide structure for low-power-consumption CFP2 transceivers

742

1.3 µm all-VCSEL low complexity coherent detection scheme for high bit rate and high splitting ratio PONs

743

1.3 µm dilute nitride HELLISH-VCSOAs

744

1.3 µm external-cavity quantum-dot comb laser for temperature control free operation

745

1.3 µm InAs/GaAs high-density quantum dot lasers

746

1.3 µm InAs/GaAs quantum dot lasers on Si rib structures with current injection across direct-bonded GaAs/Si heterointerfaces

747

1.3 µm InAs/GaAs quantum dot lasers on SOI waveguide structures

748

1.3 µm mode-locked disk laser with wafer fused gain chip and SESAM

749

1.3 µm Passive Feedback Laser for 28 Gb/s and 40 Gb/s transmission over uncompensated SSMF links

750

1.3 µm solid-state dye-doped plastic waveguide laser

751

1.3 µm VCSEL transmission performance over 20 km at 12.5 Gb/s

752

1.3 μm Electroabsorption Modulated lasers for PAM4/PAM8 single channel 100 Gb/s

753

1.3 μm EML TOSA for Serial 40 Gbps Ethernet solution

754

1.3 μm high-power short-cavity VCSELs for high-speed applications

755

1.3 μm InAs quantum dots with high density, uniformity, and quality

756

1.3 μm InAs/GaAs quantum dot lasers on Si substrates with current injection across direct-bonded GaAs/Si heterointerfaces

757

1.3 μm InGaAlAs/InP VCSEL for 10G Ethernet

758

1.3 μm QD surface emitting laser using polymer optical circuit

759

1.3 μm quantum dot multi-section super-luminescent diode with extremely broad bandwidth (≫ 150 nm)

760

1.3 μm quantum-dot laser linewidth rebroadening

761

1.3 μm, 56-Gbit/s EML module target to 400GbE

762

1.3 – 1.55 µm self-organized InAs quantum dot tube nanoscale lasers on silicon

763

1.3 µm buried heterojunction laser diodes under high electrical stress: Leakage currents and aging behavior

764

1.3 µm buried-heterostructure lasers on p-type InP substrates

765

1.3 µm high-power BH laser on p-InP substrates

766

1.3 µm LPE- and VPE-grown InGaAsP edge-emitting LED́s

767

1.3 μm beam-expander integrated laser grown by single-step MOVPE

768

1.3 μm BH-FP laser with integrated monitor photodiode, 45° reflector for bottom side emission employing full on-wafer fabrication

769

1.3 μm CMOS technology merged with 90 V HG-DMOS on SOI substrate

770

1.3 μm continuous-wave operation of GaInNAs lasers grown by metal organic chemical vapour deposition

771

1.3 μm CW GaInNAs VCSEL giving 4.1 mW single transverse mode power

772

1.3 μm double quantum well GaInNAs distributed feedback laser diode with 13.8 GHz small signal modulation bandwidth

773

1.3 μm EAM-integrated DFB lasers for 40 Gb/s very-short-reach application

774

1.3 μm emission of TlGaP-LEDs grown on GaAs

775

1.3 μm fluoride fibre laser

776

1.3 μm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy

777

1.3 μm GaAs-based laser using quantum dots obtained by activated spinodal decomposition

778

1.3 μm GaAsSb resonant-cavity light-emitting diodes grown on GaAs substrate

779

1.3 μm GaInAsP lasers integrated with butt-coupled waveguide and high reflective semiconductor/air Bragg reflector (SABAR)

780

1.3 μm GaInAsP lasers with Bragg reflector consisting of semiconductor and air

781

1.3 μm GaInAsP near-travelling-wave laser amplifiers made by combination of angled facets and antireflection coatings

782

1.3 μm GaInAsP SL-QW Al-oxide confined inner stripe lasers on p-InP substrate with AlInAs-oxide confinement layer

783

1.3 μm GaInAsP/InP square buried heterostructure vertical cavity surface emitting laser grown by all MOCVD

784

1.3 μm GaInNAs bandgap difference confinement (BDC) optical amplifier

785

1.3 μm GaInNAs monolithic vertical-cavity semiconductor optical amplifier

786

1.3 μm GaInNAs optically-pumped vertical cavity semiconductor optical amplifier

787

1.3 μm high density quantum dot laser with short cavity and cleaved facet

788

1.3 μm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

789

1.3 μm InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

790

1.3 μm InAs_yP₁-_y-InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor deposition

791

1.3 μm InAsP quantum well lasers grown by solid source MBE

792

1.3 μm InAsP/lnAlGaAs MQW lasers for high-temperature operation

793

1.3 μm InAsP-GaInAsP-InGaP strain-compensated MQW lasers grown by GSMBE

794

1.3 μm InGaAs/GaAs strained quantum well lasers with InGaP cladding layer

795

1.3 μm InGaAsN quantum well vertical cavity surface emitting lasers on GaAs substrates

796

1.3 μm InGaAsN vertical cavity surface emitting lasers grown by MOCVD

797

1.3 μm InGaAsP half duplex transceivers fabricated using a novel chromium doped semi-insulating blocking structure

798

1.3 μm InGaP/InAsP MQW lasers with large spot-size and low loss fibre chip coupling fabricated by a standard buried heterostructure process

799

1.3 μm InP/InGaAsP digital optical switches with extinction ratio of 30 dB

800

1.3 μm large spot-size laser diodes with laterally tapered active layer

801

1.3 μm laser diodes with butt-jointed selectively grown spot-size converters uniformly fabricated on a 2 in InP substrate

802

1.3 μm laterally gain coupled tunable distributed feedback lasers based on GaInNAs

803

1.3 μm light emission from Al₂O₃/Si_1-xGe_x/Si MOS tunnel diodes

804

1.3 μm light-emission-and-detection (LEAD) diodes with semi-insulating buried heterostructure

805

1.3 μm ln(Ga)As/GaAs quantum-dot lasers and their dynamic properties

806

1.3 μm low cost plastic module for 622 Mbit/s transmission at 85°C

807

1.3 μm low threshold Al-oxide confined inner stripe (ACIS) lasers and ACIS laser array

808

1.3 μm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

809

1.3 μm multiquantum well decoupled confinement heterostructure (MQW-DCH) laser diodes

810

1.3 μm on-demand single photon source for fibre systems

811

1.3 μm optical encoder/correlators on GaAs-based photonic integrated circuits

812

1.3 μm polarization insensitive amplifier with integrated mode transformer

813

1.3 μm quantum dot DFB lasers

814

1.3 μm quantum dot lasers with single and stacked active layers

815

1.3 μm quantum dot vertical-cavity surface-emitting laser with external light injection

816

1.3 μm quantum-dot lasers with improved high temperature properties

817

1.3 μm Raman fiber amplifiers

818

1.3 μm Raman fibre amplifier pumped by chromium-doped forsterite laser

819

1.3 μm single mode PBH DFB lasers by three step MOCVD

820

1.3 μm SLMQW DFB lasers with high quantum efficiency for -40-85°C operation

821

1.3 μm spot-size converter integrated ASM-BH LDs with low operating current and high coupling efficiency

822

1.3 μm strained MQW AlGaInAs and InGaAsP ridge-waveguide lasers-a comparative study

823

1.3 μm strained MQW-DFB lasers with extremely-low-intermodulation distortion for 1.9 GHz analog transmission

824

1.3 μm tapered active stripe lasers with high slope efficiency and large beam spot-size

825

1.3 μm uncooled AlGaInAs-MQW DFB laser with λ/4-shifted grating

826

1.3 μm VCSELs for fiber-optical communication systems

827

1.3 μm waveguided electroabsorption modulators with strain-compensated InAsP/InGaP MQW structures

828

1.3 μm wavelength GaInAsP/InP distributed feedback lasers grown directly on grating substrates by solid source molecular beam epitaxy

829

1.3 μm wavelength, folded-cavity surface-emitting lasers fabricated by CH₄/H₂ angled facet reactive ion etching

830

1.3 μm wavelength, low-threshold strained quantum well laser on p-type substrate

831

1.3 μm/1.55 μm in-line transceiver assembly with -27 dBm full-duplex sensitivity

832

1.3 μm-band low threshold GaInNAsSb quantum well lasers

833

1.3 μm-GaInNAsSb based material and its application to VCSELs

834

1.3 μm-range GaInNAsSb VCSELs with high temperature operation

835

1.3 / 1.5 µm QD-SOAs for WDM/TDM GPON with extended reach and large upstream / downstream dynamic range

836

1.3 /spl mu/m AlGaInAs ridge waveguide lasers with uncooled 10 Gb/s operation at 85/spl deg/C

837

1.3 /spl mu/m GaInAsP lasers integrated with monitoring photodiodes through highly reflective semiconductor/air Bragg reflector (SABAR)

838

1.3 /spl mu/m high T/sub 0/ strained MQW laser with AlGaInAs SCH layers on a hetero-epitaxial InGaAs buffer layer

839

1.3 /spl mu/m InGaAs/GaPAsSb light emitting diode grown on GaAs

840

1.3 /spl mu/m InGaAsN VCSELs on GaAs substrates

841

1.3 /spl mu/m InGaAsN/GaAs edge emitting and vertical cavity surface emitting lasers grown by molecular beam epitaxy

842

1.3 /spl mu/m InGaAsP/InP strained-layer MQW lasers fabricated by reactive ion etching and MOVPE regrowth with CH/sub 3/Cl addition

843

1.3 /spl mu/m laser diodes with large spot size and low loss fibre-chip coupling fabricated by standard buried heterostructure laser processes

844

1.3 /spl mu/m monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

845

1.3 /spl mu/m MQW-DFB Laser with Negative Detuning for 80 ch-20 km AM-FDM Transmission

846

1.3 /spl mu/m polarization insensitive tapered waveguide mode conversion structures with mixed quantum well active regions

847

1.3 /spl mu/m Raman fiber amplifier pumped by chromium-doped forsterite laser

848

1.3 /spl mu/m strained quantum well lasers on InGaAs ternary substrates with a low threshold current density (<80 A/cm/sup 2//well)

849

1.3 /spl mu/m strained-layer MQW-DFB laser with low noise and low distortion characteristics for 100-channel CATV transmission

850

1.3 /spl mu/m tapered DFB lasers for isolator-free 2.5 Gbits all-optical networks

851

1.3 /spl mu/m vertical cavity amplifier

852

1.3 /spl mum bidirectional optical transmission over 31 km of installed single-mode fibre using optical couplers

853

1.3- $\\mu$ m Four-Channel $,\\times,$ 10-Gb/s Parallel Optical Transceiver With Polymer PLC Platforms for Very-Short-Reach Applications

854

1.3 Â¿m InGaAsP/InP multiquantum-well lasers grown by vapour-phase epitaxy

855

1.3 Â¿m InP/InGaAsP planar avalanche photodiodes

856

1.3 Â¿m, 400 Mbit/s undersea optical repeater sea trial

857

1.3 Â¿m/1.5 Â¿m bidirectional WDM optical-fibre transmission system experiment at 144 Mbit/s

858

1.3 Â¿m-wavelength mode controlled GaInAsP/InP etched laser

859

1.3 Analog CMOS from 5 micrometer to 5 nanometer

860

1.3 and 1.5 μm wavelength wafer fused InAlGaAs/InP-AlGaAs/GaAs VCSELs with high single mode output power

861

1.3 and 1.5 μm InP-based vertical cavity surface emitting lasers

862

1.3 and 1.55 $\\mu{\\rm m}$ Thermally Regenerated Gratings in Hydrogenated Boron/Germanium Co-Doped Photosensitivity Fiber

863

1.3 and 1.55-μm InP-based VCSELs for digital and radio signal transmission

864

1.3 Architecture & runtime systems

865

1.3 FPGA applications I

866

1.3 Gbit/s transmission over 107 km of dispersion-shifted monomode fibre using a 1.55 Â¿m multimode laser

867

1.3 GeV electron synchrotron

868

1.3 GHz DDL on the Basis of Narrow Reflecting Groove Microrelief

869

1.3 GHz DDL on the basis of narrow reflecting groove microrelief

870

1.3 GHz Pll With 12C.Bus

871

1.3 GHz power amplifier design using a measurement-based transistor package model

872

1.3 GHz, 10 MWp long pulse multibeam klystrons: A long heritage and proven reliability

873

1.3 gm Quantum dot distributed feedback lasers based on an asymmetric InAs/GaInAs dots-in-a-well design

874

1.3 How chips pave the Road to the Higgs particle and the attoworld beyond

875

1.3 kW average output power Yb:YAG thin-disk multipass amplifier for multi-mJ picosecond laser pulses

876

1.3 kW Yb-doped fiber laser with excellent beam quality

877

1.3 m long super-step-chirped fibre Bragg grating with a continuous delay of 13.5 ns and bandwidth 10 nm for broadband dispersion compensation

878

1.3 Mega pixels CCD pH imaging sensor with 3.75 ?m spatial resolution

879

1.3 micron high modal gain quantum dot lasers

880

1.3 micron InGaAsN oxide-confined VCSELs grown by MOCVD

881

1.3 micron VCSEL arrays for telecom applications

882

1.3 mu m distributed feedback laser diode with grating accurately controlled by new fabrication technique

883

1.3 mu m GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well (BH-GRIN-SC-MQW) lasers entirely grown by metalorganic chemical vapour deposition (MOCVD)

884

1.3 mu m GaSb metal-semiconductor-metal photodetectors

885

1.3 mu m InGaAs MSM photodetector with abrupt InGaAs/AlInAs interface

886

1.3 mu m InGaAsP Fabry-Perot lasers with reduced pulse jitter and power penalty

887

1.3 mu m InGaAsP ridge waveguide laser on GaAs and silicon substrates by thin film transfer

888

1.3 mu m MQW semiconductor optical amplifiers with high gain and output powers

889

1.3- mu m Nd:YAG crystal fiber amplifiers

890

1.3- mu m P-i-N photodetector using GaAs with As precipitates (GaAs:As)

891

1.3 mu m semiconductor laser power amplifier

892

1.3 pm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector

893

1.3 to 1.5 μm range emission from InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

894

1.3 to 1.55 $\\mu\\hbox {m}$ All-Optical Wavelength Conversion for VCSEL-to-VCSEL Inversion and Logic

895

1.3 to 1.6 micron quantum dot devices

896

1.3 V 20 ps time-to-digital converter for frequency synthesis in 90-nm CMOS

897

1.3 V low close-in phase noise NMOS LC-VCO with parallel PMOS transistors

898

1.3 V single-stage CMOS opamp

899

1.3 V supply voltage 38 GHz static frequency divider

900

1.3 W 1.9 GHz and 1 W 2.4 GHz power amplifier MMIC in silicon

901

1.3 W CW diffraction-limited monolithically integrated master oscillator flared amplifier at 863 nm [Comment and Reply]

902

1.3 W CW, diffraction-limited monolithically integrated master oscillator flared amplifier at 863 nm

903

1.3 W quantum cascade lasers with optimized design for continuous-wave operation at room temperature

904

1.3 Watt Single-Frequency Nd:YLF/ppKTP red laser

905

1.3-µm BH laser performance at microwave frequencies

906

1.3-μm GaInAsN Vertical-Cavity Surface-Emitting Lasers by Oxide-Planarized and Surface-Relief Processes for Single-Mode Operation

907

1.3-μm Quantum-Dot Multisection Superluminescent Diodes With Extremely Broad Bandwidth

908

1.3-μm AlGaInAs buried-heterostructure lasers

909

1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well lasers with a p-AlInAs electron stopper layer

910

1.3-μm AlGaInAs-InP buried-heterostructure lasers with mode profile converter

911

1.3-μm continuous wave lasing of InAs quantum dots with GaInNAs covering layer on GaAs substrate grown by metal-organic chemical vapor deposition

912

1.3-μm continuously tunable distributed feedback laser with constant power output based on GaInNAs-GaAs

913

1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers

914

1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA

915

1.3-μm GaInNAs-AlGaAs distributed feedback lasers

916

1.3-μm InAs quantum-dot laser with high dot density and high uniformity

917

1.3-μm InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

918

1.3μm InGaAsP/InP distributed-feedback P-substrate partially inverted buried-heterostructure laser diode

919

1.3-μm InP-based quantum-well lasers with n-doped separate confinement heterostructure layers for high-temperature operation

920

1.3-μm polarization insensitive amplifiers with integrated-mode transformers

921

1.3-μm Pr-doped In-Ga-based fluoride fiber amplifiers pumped by grating-fiber-pigtailed 0.98-μm-band laser diodes with a detuned wavelength of 1 μm

922

1.3-μm Quantum Dot Monolithic Multi-Section Passively Mode-Locked Lasers

923

1.3μm Quantum Dot Self-Aligned Stripe Laser

924

1.3-μm vertical-cavity amplifier

925

1.3-μm Vertical-cavity surface-emitting lasers with double-bonded GaAs-AlAs Bragg mirrors

926

1.3-μm wavelength, InGaAsP-InP folded-cavity surface-emitting lasers grown by gas-source molecular-beam epitaxy

927

1.3µm DFB laser array based on reconstruction-equivalent-chirp (REC) technique

928

1.3µm electroabsorption modulator with InAs/InGaAs/GaAs quantum dots

929

1.3µm InAs quantum dots grown on silicon substrate

930

1.3µm InAs/GaAs Quantum-Dot Laser Monolithically Grown on Si Substrates Using InAlAs/GaAs Dislocation Filter Layers

931

1.3-µm InGaAlAs/InP-AlGaAs/GaAs wafer-fused VCSELs with 10-Gb/s modulation speed up to 100°C

932

1.3-µm quantum-dot optical preamplifier with narrow bandwidth

933

1.3µm SDN-enabled optical packet switch architecture for high performance and programmable data center network

934

1.3-µm wavelength coupled VCSEL arrays employing patterned tunnel junction

935

1.3µm, 28-Gbaud 4-PAM EML Module Targeting to 400GbE

936

1.3-µm, 4×25G, EADFB laser array module for compact 10-km 100GbE transceivers

937

1.3-µm, 50-Gbit/s EADFB lasers for 400GbE

938

1.3μm hybrid silicon electroabsorption modulator

939

1.3μm hybrid silicon electroabsorption modulator with bandwidth beyond 67 GHz

940

1.3-μm InAs/GaAs quantum dot lasers on silicon-on-insulator substrates by metal-stripe bonding

941

1.3-μm InGaAs MQW Metamorphic Laser Diode Fabricated With Lattice Relaxation Control Based on In Situ Curvature Measurement

942

1.3μm passive Q-switching of a side-pumped Nd doped Gd0.6Y0.4VO4 bounce laser

943

1.3-μm quantum dot DFB laser with Half-Etching Mesa and high density QD

944

1.3-μm Quantum-dot lasers integrated with spot-size converter for improved coupling efficiency to waveguide

945

1.3-μm Range Metamorphic InGaAs Laser With High Characteristic Temperature for Low Power Consumption Operation

946

1.3μm single-mode VCSEL-by-VCSEL optical injection-locking for enhanced microwave performance

947

1.3-μm-range InGaAs metamorphic laser for low power consumption operation

948

1.3-μm-Wavelength AlGaInAs Multiple-Quantum-Well Semi-Insulating Buried-Heterostructure Distributed-Reflector Laser Arrays on Semi-Insulating InP Substrate

949

1.3-цm waveband 10-Gbaud quadrature-phase-shift-keying signal transmission over 4-km holey fiber using quantum dot laser

950

1.3–1.55-μ m CMOS/InP Optoelectronic Receiver Using a Self-Aligned Wafer Level Integration Technology

951

1.3-µm BH laser performance at microwave frequencies

952

1.3-μm AlGaInAs strain compensated MQW-buried-heterostructure lasers for uncooled 10-gb/s operation

953

1.3-μm AlGaInAs/InP ridge-waveguide lasers with integrated beam-expanders

954

1.3-μm buried-heterostructure lasers using a CH₄ reactive-ion-etched mesa structure grown by metalorganic vapor phase epitaxy

955

1.3-μm CMOS/bipolar standard cell library for VLSI computers

956

1.3-μm continuously-tunable fiber-coupled GaInNAs VCSEL

957

1.3-μm distributed feedback laser diode with a grating accurately controlled by a new fabrication technique

958

1.3-μm GaInAsP/InP buried-ridge-structure laser and its monolithic integration with photodetector using reactive ion beam etching

959

1.3-μm GaInAsP/InP transverse-mode stabilized buried-crescent lasers by a new fabrication technique using a reactive ion beam etching

960

1.3-μm GaInNAs surface-normal devices

961

1.3-μm GaInNAs VCSELs for 40-Gb/s CWDM systems

962

1.3-μm InAsP n-type modulation-doped MQW lasers grown by gas-source molecular beam epitaxy

963

1.3-μm InGaAlAs MQW RWG DFB lasers for uncooled 10-Gb/s datacom applications

964

1.3-μm InGaAsP-InP n-type modulation-doped strained multiquantum-well lasers

965

1.3-μm InP-InGaAsP lasers fabricated on Si substrates by wafer bonding

966

1.3-μm laser diode with a high-quality C-doped InAlAs

967

1.3-μm laser diodes with spot-size converter for access networks

968

1.3-μm n-type modulation-doped AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes

969

1.3-μm polarization-insensitive optical amplifier structure based on coupled quantum wells

970

1.3-μm quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: a theoretical study

971

1.3-μm spot size converter integrated laser diode with conventional buried-heterostructure laser process

972

1.3-μm spot-size converter integrated laser diodes (SS-LDs) for access network applications

973

1.3-μm spot-size-converter integrated laser diodes fabricated by narrow-stripe selective MOVPE

974

1.3-μm strained MQW-DFB lasers with extremely low intermodulation distortion for high-speed analog transmission

975

1.3-μm uncooled DFB laser-diode module with a coupled differential feed for 10-Gb/s ethernet applications

976

1.3-μm uncooled DFB lasers with low distortion for CATV application

977

1.3-μm wavelength InP laterally coupled distributed feedback ridge laser

978

1.3-μm-range GaInNAsSb-GaAs VCSELs

979

1.3/1.53 μm Mach-Zehnder wavelength duplexers for integrated optoelectronic transceiver modules

980

1.3/1.55 μm optical directional coupler by photonic crystal with a defect shifting design

981

1.3/1.55 microns duplex-diplex optical transmission: the Brasilian technology

982

1.3/1.55μm WDM transceiver modules for 155Mbps application

983

1.3-/spl mu/m AlGaInAs/InP strained multiple quantum well lasers for high-temperature operation

984

1.3-/spl mu/m CW lasing characteristics of self-assembled InGaAs-GaAs quantum dots

985

1.3/spl mu/m electroluminescence from MOCVD-grown quantum dots

986

1.3-/spl mu/m emission of Nd:LaF/sub 3/ thin films grown by molecular beam epitaxy

987

1.3-/spl mu/m GalnAsP Near Traveling-wave Laser Amplifiers Made By The Combination Of Angled Facets And Antireflection Coatings

988

1.3-/spl mu/m InAsP modulation-doped MQW lasers

989

1.3-/spl mu/m InGaAlAs directly modulated MQW RWG DFB lasers operating over 10 Gb/s and 100/spl deg/C

990

1.3-/spl mu/m InGaAs vertical-cavity surface-emitting lasers

991

1.3/spl mu/m InGaAsP/InP MQW Lasers for High Temperature Operation. Experiment and Modeling

992

1.3-/spl mu/m low threshold strained-MQW laser array for optical interconnection

993

1.3: 220 GHz 50 W sheet beam travelling wave tube amplifier

994

1.3- $\\mu$ m 4 $,\\times,$ 25-Gb/s Monolithically Integrated Light Source for Metro Area 100-Gb/s Ethe

995

1.3- $\\mu$ m AlGaInAs Multiple-Quantum-Well Semi-insulating Buried-Heterostructure Distributed-Feedback Lasers for High-Speed Direct Modulation

996

1.3- $\\mu$ m Amplifier-Free All-Optical 2R Regenerator Using Two-Mode Injection-Locked Distributed Feedback Laser Diode

997

1.3- $\\mu$ m GaNAsSb–GaAs UTC-Photodetectors for 10-Gigabit Ethernet Links

998

1.3- $\\mu$ m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process

999

1.3- $\\mu$ m InGaAlAs Short-Cavity DBR Lasers for Uncooled 10-Gb/s Operation With Low Drive Current

1000

1.3- $\\mu$ m Laterally Tapered Ridge Waveguide DFB Lasers With Second-Order Cr Surface Gratings

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