بر اساس عنوان
20
High-performance low-power CMOS circuits using multiple channel length and multiple oxide thickness68
High-performance metal-clad multimode interference devices for low-index-contrast material systems119
High-performance MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base126
High-performance monocrystalline silicon could lead the photovoltaic power generation in the future152
High-Performance Multimode Interference Coupler in Silicon Waveguides With Subwavelength Structures168
High-Performance Nanomechanical Oscillators Fabricated by Bottom-up Integration of Silicon Nanowires279
High-performance p-i-n Ge on Si photodetectors for the near infrared: from model to demonstration311
High-performance poly-Si TFTs made by Ni-mediated crystallization through low-shot laser annealing320
High-performance polysilicon contacted shallow junctions formed by stacked-amorphous-silicon films420
High-performance routers with multi-stage multi-layer switching and single-stage shared buffering466
High-performance Si photonics interposer featuring RF travelling-wave electrode (TWE) via Cu-BEOL475
High-performance SiGe epitaxial base bipolar transistors produced by a reduced-pressure CVD reactor516
High-Performance Smoothly Tapered Junction Termination Extensions for High-Voltage 4H-SiC Devices575
High-performance surface channel In-rich In580
High-performance suspended stripline wideband bandpass filter with new miniaturisation technology610
High-performance TFTs with Si nanowire channels enhanced by metal-induced lateral crystallization620
High-performance thin-film transistors in low-temperature crystallized LPCVD amorphous silicon films706
High-performance wafer-bonded bottom-emitting 850-nm VCSEL´s on undoped GaP and sapphire substrates757
High-performance, low-power, and leakage-tolerance challenges for sub-70nm microprocessor circuits835
High-power 0.8 /spl mu/m-band broad-area laser diodes with a decoupled confinement heterostructure844
High-Power 1.3-μm Quantum-Dot Superluminescent Light-Emitting Diode Grown by Molecular Beam Epitaxy882
High-power 2.1 W CW-operation of 650 nm laser diodes grown by solid-source molecular beam epitaxy897
High-power 630-nm-band AIGalnP laser diodes with strain-compensated single quantum well active layer961
High-power and high-efficiency 1.3 μm InAsP compressively-strained MQW lasers at high temperatures976
High-power and high-energy fenitosecond pulses at 1 /spl mu/m from a practical fiber-based source